(en)A novel information processing device that is highly convenient or reliable is provided. For example, a configuration including a selection circuit which has a function of selecting image information or background information on the basis of sensing information on the illuminance of an environment in which the information processing device is used and a photograph or a moving image included in the image information and supplying the selected information to a reflective display element or a light-emitting element has been devised.

1.ApplicationNumber: US-201615238888-A
1.PublishNumber: US-2017061863-A1
2.Date Publish: 20170302
3.Inventor: EGUCHI SHINGO

4.Inventor Harmonized: EGUCHI SHINGO(JP)

5.Country: US
6.Claims:
(en)A novel information processing device that is highly convenient or reliable is provided. For example, a configuration including a selection circuit which has a function of selecting image information or background information on the basis of sensing information on the illuminance of an environment in which the information processing device is used and a photograph or a moving image included in the image information and supplying the selected information to a reflective display element or a light-emitting element has been devised.

7.Description:
(en)TECHNICAL FIELD
One embodiment of the present invention relates to an information processing device or a semiconductor device.
Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. In addition, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a method for driving any of them, and a method for manufacturing any of them.
BACKGROUND ART
A liquid crystal display device in which a light-condensing means and a pixel electrode are provided on one side of a substrate and a region transmitting visible light in the pixel electrode is provided to overlap with an optical axis of the light-condensing means is known. In addition, a liquid crystal display device which uses an anisotropic light-condensing means having a light-condensing direction X and a non-light-condensing direction Y, where the non-light-condensing direction Y corresponds to a longitudinal direction of a region transmitting visible light in the pixel electrode is known (Patent Document 1).
REFERENCE
Patent Document
[Patent Document 1] Japanese Published Patent Application No. 2011-191750
DISCLOSURE OF INVENTION
An object of one embodiment of the present invention is to provide a novel information processing device that is highly convenient or reliable. Another object is to provide a novel information processing device or a novel semiconductor device.
Note that the descriptions of these objects do not disturb the existence of other objects. In one embodiment of the present invention, there is no need to achieve all the objects. Other objects will be apparent from and can be derived from the description of the specification, the drawings, the claims, and the like.
(1) One embodiment of the present invention is an information processing device that includes an input/output device and an arithmetic device.
The input/output device has a function of supplying positional information and sensing information. In addition, the input/output device has a function of receiving image information and control information.
The arithmetic device has a function of receiving the positional information and the sensing information. In addition, the arithmetic device has a function of supplying the image information and the control information.
The input/output device includes a display portion, an input portion, and a sensor portion.
The input portion has a function of supplying the positional information.
The sensor portion has a function of supplying the sensing information.
The display portion has a function of displaying the image information. In addition, the display portion includes a selection circuit, a first driver circuit, a second driver circuit, and a display panel.
The arithmetic device has a function of generating the image information. In addition, the arithmetic device has a function of generating the control information on the basis of the sensing information and the image information. Note that the control information includes a first status or a second status.
The selection circuit has a function of supplying the image information to the first driver circuit and supplying background information to the second driver circuit when receiving the control information about the first status.
The selection circuit has a function of supplying the background information to the first driver circuit and supplying the image information to the second driver circuit when receiving the control information about the second status.
The above-described information processing device of one embodiment of the present invention includes the selection circuit which has a function of selecting the image information or the background information on the basis of the sensing information and the image information and supplying the selected information. In this manner, one of the image information and the background information can be supplied to the first driver circuit and the other can be supplied to the second driver circuit. Thus, a novel information processing device that is highly convenient or reliable can be provided.
(2) Another embodiment of the present invention is the above-described information processing device in which the display panel includes a first signal line, a second signal line, and a group of pixels.
The group of pixels are arranged in a column direction.
The first signal line is electrically connected to the group of pixels arranged in the column direction. In addition, the first signal line is electrically connected to the first driver circuit.
The second signal line is electrically connected to the group of pixels arranged in the column direction. In addition, the second signal line is electrically connected to the second driver circuit.
(3) Another embodiment of the present invention is the above-described information processing device in which the pixel includes a first display element and a second display element.
The first display element includes a reflective display element. In addition, the first display element is electrically connected to the first signal line.
The second display element includes a light-emitting element. In addition, the second display element is electrically connected to the second signal line.
(4) Another embodiment of the present invention is the above-described information processing device in which the first display element includes a reflective film reflecting external light in a display direction and has a function of controlling the intensity of the reflected light.
The reflective film comprises an opening.
The second display element includes a region overlapping with the opening and a layer containing a light-emitting organic compound and has a function of emitting light toward the opening.
The above-described information processing device of one embodiment of the present invention includes the display panel including the pixel provided with the reflective display element or the light-emitting element. Thus, the reflective display element or the light-emitting element is selected on the basis of the sensing information and the image information, and the image information can be displayed using the selected reflective display element or light-emitting element. As a result, a novel information processing device that is highly convenient or reliable can be provided.
(5) Another embodiment of the present invention is the above-described information processing device in which the arithmetic device has a function of supplying the control information about the first status or the control information about the second status.
The arithmetic device has a function of supplying the control information about the first status when the sensing information is greater than or equal to a second threshold value, which is greater than a first threshold value.
The arithmetic device has a function of supplying the control information about the first status when the sensing information is greater than the first threshold value and less than the second threshold value and the image information does not include a photograph or a moving image.
The arithmetic device has a function of supplying the control information about the second status when the sensing information is greater than the first threshold value and less than the second threshold value and the image information includes a photograph or a moving image.
The arithmetic device has a function of supplying the control information about the second status when the sensing information is less than the first threshold value.
(6) Another embodiment of the present invention is the above-described information processing device in which the sensor portion includes an illuminance sensor.
The illuminance sensor has a function of supplying the sensing information including illuminance information on an environment in which the information processing device is used.
The above-described information processing device of one embodiment of the present invention includes the arithmetic device which has a function of determining the status on the basis of the sensing information and the image information and supplying the control information about the determined status. Thus, the reflective display element or the light-emitting element is selected on the basis of the sensing information such as illuminance and the image information, and the image information can be displayed using the selected reflective display element or light-emitting element. As a result, a novel information processing device that is highly convenient or reliable can be provided.
(7) Another embodiment of the present invention is the above-described information processing device in which the input portion includes at least one of a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, an audio input device, a viewpoint input device, and a pose determination device.
Although the block diagram attached to this specification shows components classified by their functions in independent blocks, it is difficult to classify actual components according to their functions completely and it is possible for one component to have a plurality of functions.
In this specification, the terms “source” and “drain” of a transistor interchange with each other depending on the polarity of the transistor or the levels of potentials supplied to the terminals. In general, in an n-channel transistor, a terminal to which a lower potential is supplied is called a source, and a terminal to which a higher potential is supplied is called a drain. Further, in a p-channel transistor, a terminal to which a lower potential is supplied is called a drain, and a terminal to which a higher potential is supplied is called a source. In this specification, although connection relation of the transistor is described assuming that the source and the drain are fixed in some cases for convenience, actually, the names of the source and the drain interchange with each other depending on the relation of the potentials.
In this specification, a “source” of a transistor means a source region that is part of a semiconductor film functioning as an active layer or a source electrode connected to the semiconductor film. Similarly, a “drain” of the transistor means a drain region that is part of the semiconductor film or a drain electrode connected to the semiconductor film. A “gate” means a gate electrode.
In this specification, a state in which transistors are connected to each other in series means, for example, a state in which only one of a source and a drain of a first transistor is connected to only one of a source and a drain of a second transistor. In addition, a state in which transistors are connected to each other in parallel means a state in which one of a source and a drain of a first transistor is connected to one of a source and a drain of a second transistor and the other of the source and the drain of the first transistor is connected to the other of the source and the drain of the second transistor.
In this specification, the term “connection” means electrical connection and corresponds to a state where a current, a voltage, or a potential can be supplied or transmitted. Accordingly, a connection state means not only a state of direct connection but also a state of indirect connection through a circuit element such as a wiring, a resistor, a diode, or a transistor that allows a current, a voltage, or a potential to be supplied or transmitted.
In this specification, even when different components are connected to each other in a circuit diagram, there is actually a case where one conductive film has functions of a plurality of components, such as a case where part of a wiring serves as an electrode. The term “connection” also means such a case where one conductive film has functions of a plurality of components.
In addition, in this specification, one of a first electrode and a second electrode of a transistor refers to a source electrode and the other refers to a drain electrode.
According to one embodiment of the present invention, a novel information processing device that is highly convenient or reliable can be provided. Alternatively, a novel information processing device or a novel semiconductor device can be provided.
Note that the description of these effects does not disturb the existence of other effects. One embodiment of the present invention does not necessarily obtain all the effects listed above. Other effects will be apparent from and can be derived from the description of the specification, the drawings, the claims, and the like.



BRIEF DESCRIPTION OF DRAWINGS
In the accompanying drawings:
FIGS. 1A to 1 D 2 illustrate a configuration of an information processing device of one embodiment and image information that is displayed;
FIG. 2 is a flow chart showing a program that can be used for an information processing device of one embodiment;
FIGS. 3A to 3C illustrate information processing devices of embodiments;
FIGS. 4A to 4C illustrate information processing devices of embodiments;
FIGS. 5A and 5B are flow charts showing a program that can be used for an information processing device of one embodiment;
FIGS. 6A to 6 B 2 illustrate a structure of a display panel that can be used in an information processing device of one embodiment;
FIGS. 7A to 7C are cross-sectional views illustrating a structure of a display panel that can be used in an information processing device of one embodiment;
FIG. 8 is a circuit diagram illustrating a pixel circuit that can be used in an information processing device of one embodiment;
FIGS. 9A to 9 B 2 illustrate information processing devices of embodiments;
FIGS. 10A to 10D illustrate a structure of a transistor of one embodiment;
FIGS. 11A to 11C illustrate a structure of a transistor of one embodiment;
FIG. 12 illustrates a structure of an input/output device of one embodiment;
FIGS. 13A to 13C are a cross-sectional view and circuit diagrams illustrating structures of semiconductor devices of embodiments;
FIG. 14 is a block diagram illustrating a configuration of a CPU of one embodiment;
FIG. 15 is a circuit diagram illustrating a configuration of a memory element of one embodiment;
FIGS. 16A to 16H each illustrate a structure of an electronic device of one embodiment;
FIGS. 17A and 17B are cross-sectional views illustrating a structure of a display panel that can be used in an information processing device of one embodiment;
FIGS. 18A and 18B illustrate image information of an information processing device of one embodiment;
FIG. 19 shows measured XRD spectra of samples of embodiments;
FIGS. 20A to 20L are TEM images and electron diffraction patterns of samples of embodiments; and
FIGS. 21A to 21C show EDX mapping images of a sample of one embodiment.



BEST MODE FOR CARRYING OUT THE INVENTION
An information processing device of one embodiment of the present invention includes a selection circuit which has a function of selecting image information or background information on the basis of sensing information and image information and supplying the selected information.
In this manner, one of the image information and the background information can be supplied to a first driver circuit and the other can be supplied to a second driver circuit. Thus, a novel information processing device that is highly convenient or reliable can be provided.
Embodiments will be described in detail with reference to drawings. Note that the present invention is not limited to the description below, and it is easily understood by those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the present invention. Accordingly, the present invention should not be interpreted as being limited to the content of the embodiments below. Note that in the structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description of such portions is not repeated.
Embodiment 1
In this embodiment, a configuration of an information processing device of one embodiment of the present invention will be described with reference to FIGS. 1A to 1 D 2 , FIG. 2 , FIGS. 3A to 3C , and FIGS. 4A to 4C .
FIGS. 1A to 1 D 2 illustrate a configuration of the information processing device of one embodiment of the present invention. FIG. 1A is a block diagram of a display portion 230 that can be used in the information processing device of one embodiment of the present invention and FIG. 1B is a block diagram illustrating a selection circuit 239 , a first driver circuit SD 1 , or a second driver circuit SD 2 in FIG. 1A . FIG. 1C is a schematic view illustrating image information V 1 , FIG. 1 D 1 is a schematic view illustrating a portion other than a photograph or a moving image that is included in the image information V 1 , and FIG. 1 D 2 is a schematic view illustrating the photograph or the moving image that are included in the image information V 1 .
FIG. 2 is a flow chart showing a program that can be used for the information processing device of one embodiment of the present invention.
FIG. 3A is a block diagram illustrating a configuration of an information processing device 200 . FIGS. 3B and 3C are projection views illustrating examples of external views of the information processing device 200 .
FIG. 4A is a block diagram illustrating a configuration of a display portion 230 . FIG. 4B is a block diagram illustrating a configuration of a display portion 230 B. FIG. 4C is a circuit diagram illustrating a configuration of a pixel 232 ( i, j ).
Note that in this specification, an integral variable of 1 or more may be used for reference numerals. For example, “(p)” where p is an integral variable of 1 or more may be used for part of a reference numeral that specifies any one of components (p components in maximum). For another example, “(m, n)” where m and n are each an integral variable of 1 or more may be used for part of a reference numeral that specifies any one of components (m×n components in maximum).
<Configuration Example of Information Processing Device>
The information processing device 200 described in this embodiment includes an input/output device 220 and an arithmetic device 210 (see FIG. 3A ).
The input/output device 220 has a function of supplying positional information P 1 and sensing information P 2 . In addition, the input/output device 220 has a function of receiving the image information V 1 and control information SS.
The arithmetic device 210 has a function of receiving the positional information P 1 and the sensing information P 2 . In addition, the arithmetic device 210 has a function of supplying the image information V 1 and the control information SS.
The input/output device 220 includes the display portion 230 , an input portion 240 , and a sensor portion 250 .
The input portion 240 has a function of supplying the positional information P 1 .
The sensor portion 250 has a function of supplying the sensing information P 2 .
The display portion 230 has a function of displaying the image information V 1 .
The display portion 230 includes the selection circuit 239 , the first driver circuit SD 1 , the second driver circuit SD 2 , and a display panel (see FIG. 1A ).
The arithmetic device 210 has a function of generating the image information V 1 (see FIG. 3A ). In addition, the arithmetic device 210 has a function of generating the control information SS on the basis of the sensing information P 2 and the image information V 1 . Note that the control information SS includes a first status or a second status.
The selection circuit 239 has a function of supplying the image information V 1 to the first driver circuit SD 1 and supplying background information VBG to the second driver circuit SD 2 when receiving the control information SS about the first status (see FIG. 1B ). As the background information, a black image, a white image, an image of a predetermined color, or a predetermined background image can be used, for example. Specifically, a color that can be displayed with a small amount of power can be selected to be used as the predetermined color. Alternatively, a color that can be displayed without decreasing the display quality of an image displayed by a display element to which the background information VBG is not supplied can be selected to be used as the predetermined color.
The selection circuit 239 has a function of supplying the background information VBG to the first driver circuit SD 1 and supplying the image information V 1 to the second driver circuit SD 2 when receiving the control information SS about the second status.
The information processing device described in this embodiment includes the selection circuit which has a function of selecting the image information or the background information on the basis of the sensing information and the image information and supplying the selected information. In this manner, one of the image information and the background information can be supplied to the first driver circuit and the other can be supplied to the second driver circuit. Thus, a novel information processing device that is highly convenient or reliable can be provided.
The display panel of the information processing device 200 described in this embodiment includes a first signal line S 1 ( j ), a second signal line S 2 ( j ), and a group of pixels 232 ( 1 , j ) to 232 ( m, j ) (see FIG. 1A ).
The group of pixels 232 ( 1 , j ) to 232 ( m, j ) are arranged in a column direction. Note that i is an integer greater than or equal to 1 and less than or equal to m, j is an integer greater than or equal to 1 and less than or equal to n, and m and n are each an integer greater than or equal to 1.
The first signal line S 1 ( j ) is electrically connected to the group of pixels 232 ( 1 , j ) to 232 ( m, j ) arranged in the column direction. In addition, the first signal line S 1 ( j ) is electrically connected to the first driver circuit SD 1 .
The second signal line S 2 ( j ) is electrically connected to the group of pixels 232 ( 1 , j ) to 232 ( m, j ) arranged in the column direction. In addition, the second signal line S 2 ( j ) is electrically connected to the second driver circuit SD 2 .
The pixel 232 ( i, j ) of the information processing device 200 described in this embodiment includes a first display element 235 A and a second display element 235 B (see FIG. 4C ).
The first display element 235 A includes a reflective display element and is electrically connected to the first signal line S 1 ( j ).
The second display element 235 B includes a light-emitting element and is electrically connected to the second signal line S 2 ( j ).
The information processing device described in this embodiment includes the display panel including the pixel provided with the reflective display element or the light-emitting element. Thus, the reflective display element or the light-emitting element is selected on the basis of the sensing information and the image information, and the image information can be displayed using the selected reflective display element or light-emitting element. As a result, a novel information processing device that is highly convenient or reliable can be provided.
Furthermore, the arithmetic device 210 of the information processing device 200 described in this embodiment has a function of supplying the control information SS about the first status when the sensing information P 2 is greater than or equal to a second threshold value, which is greater than a first threshold value.
The arithmetic device 210 has a function of supplying the control information SS about the first status when the sensing information P 2 is greater than the first threshold value and less than the second threshold value and the image information does not include a photograph or a moving image.
The arithmetic device 210 has a function of supplying the control information SS about the second status when the sensing information P 2 is greater than the first threshold value and less than the second threshold value and the image information includes a photograph or a moving image.
The arithmetic device 210 has a function of supplying the control information SS about the second status when the sensing information P 2 is less than the first threshold value.
Moreover, the sensor portion 250 of the information processing device 200 described in this embodiment includes an illuminance sensor and the sensing information P 2 contains illuminance information on the environment in which the information processing device 200 is used (see FIG. 3A ).
The information processing device described in this embodiment includes the arithmetic device which has a function of determining the status on the basis of the sensing information and the image information and supplying the control information about the determined status. Thus, the reflective display element or the light-emitting element is selected on the basis of the sensing information such as illuminance and the image information, and the image information can be displayed using the selected reflective display element or light-emitting element. As a result, a novel information processing device that is highly convenient or reliable can be provided.
Moreover, the information processing device 200 includes a communication portion 290 .
The following describes components included in the information processing device 200 . Note that these components cannot be clearly distinguished and one component also serves as another component or includes part of another component in some cases.
For example, the display portion 230 with which the input portion 240 overlaps serves as both the input portion 240 and the display portion 230 .
<<Configuration Example>>
The information processing device 200 includes the arithmetic device 210 , the input/output device 220 , the display portion 230 , the sensor portion 250 , or the input portion 240 .
<<Arithmetic Device 210 >>
The arithmetic device 210 includes an arithmetic portion 211 and a memory portion 212 . The arithmetic device 210 further includes a transmission path 214 and an input/output interface 215 .
<<Arithmetic Portion 211 >>
The arithmetic portion 211 has a function of, for example, executing a program.
<<Memory Portion 212 >>
The memory portion 212 has a function of, for example, storing the program executed by the arithmetic portion 211 , initial information, setting information, an image, or the like.
Specifically, a hard disk, a flash memory, a transistor including an oxide semiconductor, or the like can be used.
<<Program>>
For example, a program for determining the status of the control information SS on the basis of the sensing information P 2 and the image information V 1 can be used for the arithmetic device 210 .
Specifically, a program including the following steps can be used.
<<First Step>>
When the sensing information P 2 is greater than or equal to the first threshold value in a first step, a second step is selected, and when the sensing information P 2 is less than the first threshold value in the first step, a fourth step is selected (see (T 1 ) in FIG. 2 ).
For example, an illuminance sensor is used for the sensor portion 250 and the sensing information P 2 about the illuminance is supplied to the sensor portion 250 to compare the sensing information P 2 with the predetermined threshold value. Specifically, the illuminance sensed by the illuminance sensor in a dim environment can be set to the first threshold value.
<<Second Step>>
When the sensing information P 2 is less than the second threshold value in the second step, a third step is selected, and when the sensing information P 2 is greater than or equal to the second threshold value in the second step, a fifth step is selected (see (T 2 ) in FIG. 2 ).
Specifically, the illuminance sensed by the illuminance sensor in a bright outdoor environment can be set to the second threshold value.
<<Third Step>>
When the image information V 1 is a photograph or a moving image in the third step, the fourth step is selected, and when the image information V 1 is not a photograph or a moving image in the third step, the fifth step is selected (see (T 3 ) in FIG. 2 ).
For example, in the case where the image information V 1 is generated using a file in a format which is used to store a photograph or a moving image, the arithmetic device 210 can recognize the format to determine that the image information V 1 is a photograph or a moving image. The format of the file can be recognized using the extension of the file and information stored in a metafile, for example.
For example, in the case where the image information V 1 is generated using a file in a format which is used to store text or a chart, the arithmetic device 210 can recognize the format to determine that the image information V 1 is not a photograph or a moving image.
Alternatively, in the case where the image information V 1 includes a plurality of regions, the arithmetic device 210 can determine whether each region of the image information V 1 is a photograph or a moving image or not (see FIGS. 1C , 1 D 1 , and 1 D 2 ).
For example, in the case where a region A 11 of the image information V 1 is generated using a file in a format which is used to store a photograph or a moving image, the arithmetic device 210 can recognize the format to determine that the region A 11 of the image information V 1 is a photograph or a moving image. Note that in the case where the region A 11 and a file displayed on the region A 11 are specified by markup language and a tag, for example, the format of the file relating to the tag is recognized, whereby the image information V 1 can be determined to be a photograph or a moving image.
For example, in the case where a region A 10 of the image information V 1 is generated using a file in a format which is used to store text or a chart, the arithmetic device 210 can determine that the region A 10 of the image information V 1 is not a photograph or a moving image.
Information V 11 and information V 12 can be generated from the image information V 1 using the control information SS (see FIG. 1B and FIGS. 18A and 18B ).
For the control information SS about the second status, a potential which is higher than that of the control information about the first status can be used (see FIG. 18A ).
In the case where the pixels in an i-th row are arranged in a region on which the image information other than the photograph and the moving image is displayed, the arithmetic device 210 supplies the control information SS about the first status and the selection circuit 239 supplies the information V 11 including the image information V 1 (see FIGS. 18A and 18B ).
In the case where the pixels in an i+1-th row and an i+2-th row are arranged in a region where a region on which the image information other than the photograph and the moving image is displayed and a region on which the photograph or the moving image is displayed are mixed, the arithmetic device 210 supplies the control information SS about the first status and the control information SS about the second status and the selection circuit 239 supplies the information V 11 including the image information V 1 and the information V 12 including the image information V 1 .
In the case where the pixels in an i+3-th row are arranged in a region on which the photograph or the moving image is displayed, the arithmetic device 210 supplies the control information SS about the second status and the selection circuit 239 supplies the information V 12 including the image information V 1 .
<<Fourth Step>>
In the fourth step, the control information SS is set to the second status (see (T 4 ) in FIG. 2 ).
On the basis of the control information SS about the second status, the selection circuit 239 supplies the background information VBG and the image information V 1 to the first driver circuit SD 1 and the second driver circuit SD 2 , respectively (see FIG. 1B ).
<<Fifth Step>>
In the fifth step, the control information SS is set to the first status (see (T 5 ) in FIG. 2 ).
On the basis of the control information SS about the first status, the selection circuit 239 supplies the image information V 1 and the background information VBG to the first driver circuit SD 1 and the second driver circuit SD 2 , respectively (see FIG. 1B ).
<<Sixth Step>>
When a termination instruction is supplied in a sixth step, a seventh step is selected, and when the termination instruction is not supplied in the sixth step, the first step is selected (see (T 6 ) in FIG. 2 ).
Note that the termination instruction may be supplied using the interrupt processing.
<<Seventh Step>>
In the seventh step, the program is terminated (see (T 7 ) in FIG. 2 ).
Thus, the status of the control information can be determined on the basis of the sensing information such as illuminance and the image information. As a result, the reflective display element or the light-emitting element is selected, and the image information can be displayed using the selected reflective display element or light-emitting element.
When the information processing device 200 is used in a dim or dark environment, the image information can be displayed using the light-emitting element. Thus, the image information can be favorably displayed even in a dark environment.
When the information processing device 200 is used in a bright environment, the image information such as a photograph or a moving image can be displayed using the light-emitting element. Thus, the photograph or the moving image can be displayed with favorable color reproducibility. In addition, the photograph or the moving image can be displayed with high contrast. Alternatively, with the reflective display element, the image information other than the photograph and the moving image can be displayed. Thus, power consumed in displaying can be reduced.
When the information processing device 200 is used in an extremely bright environment, the image information can be displayed using the reflective display element. Thus, the image information can be favorably displayed even outdoors on a sunny day. Moreover, power consumption can be reduced.
<<Input/Output Interface 215 , Transmission Path 214 >>
The input/output interface 215 includes a terminal or a wiring and has a function of supplying and receiving information. For example, the input/output interface 215 can be electrically connected to the transmission path 214 and the input/output device 220 .
The transmission path 214 includes a wiring and has a function of supplying and receiving information. For example, the transmission path 214 can be electrically connected to the input/output interface 215 . In addition, the transmission path 214 can be electrically connected to the arithmetic portion 211 , the memory portion 212 , or the input/output interface 215 .
<<Input/Output Device 220 >>
The input/output device 220 includes the display portion 230 , the input portion 240 , the sensor portion 250 , or the communication portion 290 .
For example, the input/output device 220 includes the display portion 230 and the input portion 240 having a region overlapping with the display portion 230 . A touch panel or the like can be used for the input/output device 220 . Specifically, the touch panel described in Embodiment 4 can be used for the input/output device 220 .
<<Display Portion 230 >>
For example, the display panel, the selection circuit 239 , the driver circuit SD 1 , or the driver circuit SD 2 can be used in the display portion 230 (see FIG. 1A and FIGS. 4A to 4C ).
A display region 231 includes at least one pixel 232 ( i, j ), a scan line G 1 ( i ) and a scan line G 2 ( i ) which are electrically connected to the pixel 232 ( i, j ) arranged in a row direction, and the signal line S 1 ( j ) and the signal line S 2 ( j ) which are electrically connected to the pixel 232 ( i, j ) arranged in a column direction crossing the row direction. Note that i is an integer greater than or equal to 1 and less than or equal to m, j is an integer greater than or equal to 1 and less than or equal to n, and m and n are each an integer greater than or equal to 1.
Note that the pixel 232 ( i, j ) is electrically connected to the scan line G 1 ( i ), the scan line G 2 ( i ), the signal line S 1 ( j ), the signal line S 2 ( j ), a wiring ANO, a wiring CSCOM, a wiring VCOM 1 , and a wiring VCOM 2 (see FIG. 4C ).
The display portion can include a plurality of driver circuits. For example, the display portion 230 B can include a driver circuit GDA and a driver circuit GDB (see FIG. 4B ).
<<Driver Circuit GD>>
The driver circuit GD has a function of supplying a selection signal on the basis of the control information.
For example, the driver circuit GD has a function of supplying a selection signal to one scan line with a frequency of 30 Hz or higher, preferably 60 Hz or higher, on the basis of the control information. Accordingly, moving images can be smoothly displayed.
For example, the driver circuit GD has a function of supplying a selection signal to one scan line with a frequency of lower than 30 Hz, preferably lower than 1 Hz, and further preferably less than once per minute, on the basis of the control information. Accordingly, a still image can be displayed while flickering is suppressed.
Furthermore, for example, in the case where a plurality of driver circuits is provided, the driver circuits GDA and GDB can supply the selection signals with different frequencies. Specifically, the selection signal can be supplied with a higher frequency to a region on which moving images are smoothly displayed than to a region on which a still image is displayed in a state where flickering is suppressed.
<<Display Panel>>
For example, the display region 231 which has a function of displaying the image information V 1 can be used in the display panel. Furthermore, the group of pixels 232 ( 1 , j ) to 232 ( m,j ) can be used in the display region 231 (see FIG. 1A ).
In addition, the first signal line S 1 ( j ) and the second signal line S 2 ( j ) can be used in the display panel.
Specifically, a display panel described in Embodiment 3 can be used in the display portion 230 .
<<Selection Circuit 239 >>
In the selection circuit 239 , a first multiplexer and a second multiplexer can be used, for example (see FIG. 1B ).
The first multiplexer includes a first input portion to which the image information V 1 is supplied and a second input portion to which the background information VBG is supplied, and receives the control information SS. The first multiplexer outputs the image information V 1 when receiving the control information SS about the first status and outputs the background information VBG when receiving the control information SS about the second status. Note that the information output from the first multiplexer is referred to as the information V 11 .
The second multiplexer includes a first input portion to which the background information VBG is supplied and a second input portion to which the image information V 1 is supplied, and receives the control information SS. The second multiplexer outputs the background information VBG when receiving the control information SS about the first status and outputs the image information V 1 when receiving the control information SS about the second status. Note that the information output from the second multiplexer is referred to as the information V 12 .
<<Driver Circuit SD 1 , Driver Circuit SD 2 >>
The driver circuit SD 1 has a function of supplying an image signal on the basis of the information V 11 . The driver circuit SD 2 has a function of supplying an image signal on the basis of the information V 12 . Note that, instead of the driver circuits SD 1 and SD 2 , a driver circuit SD in which the driver circuits SD 1 and SD 2 are integrated can be used.
For example, any of a variety of sequential circuits, such as a shift register, can be used as the driver circuit SD 1 or SD 2 .
Specifically, an integrated circuit formed on a silicon substrate can be used as the driver circuit SD.
The driver circuit SD 1 has a function of generating a signal to be supplied to a pixel circuit electrically connected to the reflective display element, for example. Specifically, the driver circuit SD 1 has a function of generating a signal whose polarity is inverted. Thus, for example, the reflective liquid crystal display element can be driven.
The driver circuit SD 2 has a function of generating a signal to be supplied to a pixel circuit electrically connected to the light-emitting element, for example.
<<Pixel 232 ( i, j )>>
For example, the reflective display element and the light-emitting element can be used in the pixel 232 ( i, j ) (see FIG. 4C ).
Specifically, the pixel 232 ( i, j ) includes a first display element 235 A and a second display element 235 B. The pixel 232 ( i, j ) further includes a pixel circuit for driving the first display element 235 A and the second display element 235 B.
<<First Display Element 235 A>>
For example, a display element having a function of controlling light reflection or transmission can be used as the first display element 235 A. By using a reflective display element, the power consumption of a display panel can be reduced.
For example, a combined structure of a liquid crystal element and a polarizing plate or a MEMS shutter display element can be used. Specifically, a reflective liquid crystal display element can be used as the first display element 235 A.
The first display element 235 A includes a first electrode, a second electrode, and a liquid crystal layer. The liquid crystal layer contains a liquid crystal material whose orientation can be controlled by a voltage applied between the first electrode and the second electrode. For example, the orientation of the liquid crystal material can be controlled by an electric field in the thickness direction (also referred to as the vertical direction), the horizontal direction, or the diagonal direction of the liquid crystal layer.
<<Second Display Element 235 B>>
For example, a display element having a function of emitting light can be used as the second display element 235 B. Specifically, an organic EL element can be used.
For example, an organic EL element having a function of emitting white light can be used as the second display element 235 B. Alternatively, an organic EL element that emits blue light, green light, or red light can be used as the second display element 235 B.
<<Pixel Circuit>>
A circuit having a function of driving the first display element 235 A or the second display element 235 B can be used as the pixel circuit.
A switch, a transistor, a diode, a resistor, an inductor, a capacitor, or the like can be used in the pixel circuit.
For example, one or a plurality of transistors can be used as a switch. Alternatively, a plurality of transistors connected in parallel, in series, or in combination of parallel connection and series connection can be used as a switch.
<<Transistor>>
For example, a semiconductor film formed at the same step can be used for transistors in the driver circuit and the pixel circuit.
For example, bottom-gate transistors, top-gate transistors, or the like can be used.
For example, a manufacturing line for a bottom-gate transistor including amorphous silicon as a semiconductor can be easily remodeled into a manufacturing line for a bottom-gate transistor including an oxide semiconductor as a semiconductor. Furthermore, for example, a manufacturing line for a top-gate transistor including polysilicon as a semiconductor can be easily remodeled into a manufacturing line for a top-gate transistor including an oxide semiconductor as a semiconductor.
For example, a transistor including a semiconductor containing an element of Group 14 can be used. Specifically, a semiconductor containing silicon can be used for a semiconductor film. For example, single crystal silicon, polysilicon, microcrystalline silicon, or amorphous silicon can be used for the semiconductor of the transistor.
Note that the temperature needed for forming a transistor using polysilicon as a semiconductor is lower than that for forming a transistor using single crystal silicon as a semiconductor.
In addition, the transistor using polysilicon as a semiconductor has a higher field-effect mobility than the transistor using amorphous silicon as a semiconductor, and therefore can have a higher aperture ratio of pixel. Moreover, pixels arranged at an extremely high density, a gate driver circuit, and a source driver circuit can be formed over the same substrate. As a result, the number of components included in an electronic device can be reduced.
In addition, the transistor using polysilicon as a semiconductor has higher reliability than the transistor using amorphous silicon as a semiconductor.
For example, a transistor including an oxide semiconductor can be used. Specifically, an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc can be used for a semiconductor film.
For example, a transistor having a lower leakage current in an off state than a transistor that uses amorphous silicon for a semiconductor film can be used. Specifically, a transistor that uses an oxide semiconductor for a semiconductor film can be used.
Accordingly, the pixel circuit can hold an image signal for a longer time than a pixel circuit including a transistor that uses amorphous silicon for a semiconductor film. Specifically, the selection signal can be supplied with a frequency of lower than 30 Hz, preferably lower than 1 Hz, and more preferably less than once per minute while flickering is suppressed. Consequently, eyestrain on a user of the information processing device can be reduced, and power consumption for driving can be reduced.
Alternatively, for example, a transistor including a compound semiconductor can be used. Specifically, a semiconductor containing gallium arsenide can be used for a semiconductor film.
For example, a transistor including an organic semiconductor can be used. Specifically, an organic semiconductor containing any of polyacenes and graphene can be used for the semiconductor film.
<<Input Portion 240 >>
The input portion 240 includes an input panel.
For example, the input panel includes a proximity sensor which has a function of sensing an approaching pointer. Note that a finger, a stylus pen, or the like can be used as the pointer.
As the stylus pen, a light-emitting element such as a light-emitting diode, a piece of metal, a coil, or the like can be used.
For example, a capacitive proximity sensor, an electromagnetic inductive proximity sensor, an infrared light detection type proximity sensor, a proximity sensor including a photoelectric conversion element, or the like can be used as the proximity sensor.
The capacitive proximity sensor includes a conductive film and has a function of detecting the proximity of an object with inductivity larger than that of the air to the conductive film. For example, a plurality of conductive films is provided in different regions of the input panel, and a region a finger or the like serving as a pointer approaches is identified in accordance with a change in the parasitic capacitance of the conductive film to determine positional information.
In addition, the electromagnetic inductive proximity sensor has a function of detecting the proximity of a piece of metal, a coil, or the like to the detection circuit. For example, a plurality of oscillator circuits is provided in different regions of the input panel, and a region a piece of metal, a coil, or the like in a stylus pen or the like serving as a pointer approaches can be identified in accordance with a change in the circuit constant of the oscillation circuit to determine positional information.
For example, the photo-detection proximity sensor has a function of detecting the proximity of a light-emitting element. For example, a plurality of photoelectric conversion elements is provided in different regions of the input panel, and a region a light-emitting element in a stylus pen or the like serving as a pointer approaches can be identified in accordance with a change in the electromotive force of the photoelectric conversion element to determine positional information.
<<Sensor Portion 250 >>
As the sensor portion 250 , a sensor having a function of sensing the surrounding state and supplying the sensing information P 2 can be used.
For example, an illuminance sensor that senses the brightness of an environment, a human motion sensor, or the like can be used for the sensor portion 250 .
For example, a camera, an acceleration sensor, a direction sensor, a pressure sensor, a temperature sensor, a humidity sensor, an illuminance sensor, or a global positioning system (GPS) signal receiving circuit can be used as the sensor portion 250 .
<<Communication Portion 290 >>
The communication portion 290 has a function of supplying or acquiring information to/from a network.
Note that this embodiment can be combined with any of the other embodiments in this specification as appropriate.
Embodiment 2
In this embodiment, a program that can be used for an information processing device of one embodiment of the present invention is described with reference to FIGS. 5A and 5B .
FIGS. 5A and 5B are flow charts showing the program of one embodiment of the present invention. FIG. 5A is a flow chart showing main processing of the program of one embodiment of the present invention, and FIG. 5B is a flow chart showing interrupt processing.
<Example of Program>
The program of one embodiment of the present invention is composed of the following steps (see FIG. 5A ).
<<First Step>>
In the first step, setting is initialized (see (S 1 ) in FIG. 5A ).
For example, predetermined image information which is to be displayed on starting and information for specifying a method of displaying the image information are acquired from the memory portion 212 (see FIG. 3A ). Specifically, a still image can be used as the predetermined image information. A method of refreshing image information at a frequency lower than that in the case of displaying a moving image can be used as the method of displaying image information. For example, a second mode can be used as the method of displaying image information.
<<Second Step>>
In the second step, interrupt processing is allowed (see (S 2 ) in FIG. 5A ). Note that an arithmetic device allowed to execute the interrupt processing can perform the interrupt processing in parallel with the main processing. The arithmetic device which has returned from the interrupt processing to the main processing can reflect the results of the interrupt processing in the main processing.
The arithmetic device may execute the interrupt processing when a counter has an initial value, and the counter may be set at a value other than the initial value when the arithmetic device returns from the interrupt processing. Thus, the interrupt processing is ready to be executed after the program is started up.
<<Third Step>>
In the third step, image information is displayed in a mode selected in the first step or the interrupt processing (see (S 3 ) in FIG. 5A ). Note that the method of displaying image information is specified by a mode.
For example, the first mode or the second mode can be selected.
<<First Mode>>
Specifically, a method of supplying selection signals to a scan line at a frequency of 30 Hz or more, preferably 60 Hz or more, and performing display in accordance with the selection signals can be used as the first mode.
The supply of selection signals at a frequency of 30 Hz or more, preferably 60 Hz or more, can display a smooth moving image.
For example, an image is refreshed at a frequency of 30 Hz or more, preferably 60 Hz or more, so that an image smoothly following the user's operation can be displayed on the information processing device 200 the user operates.
<<Second Mode>>
Specifically, a method of supplying selection signals to a scan line at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably once a minute and performing display in accordance with the selection signals can be used as the second mode.
The supply of selection signals at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably once a minute, can perform display with flickers reduced. Furthermore, power consumption can be reduced.
For example, when the information processing device 200 is used for a clock or watch, the display can be refreshed at a frequency of once a second or once a minute.
<<Fourth Step>>
In the fourth step, the program moves to the fifth step when a termination instruction is supplied, and the program moves to the third step when the termination instruction is not supplied (see (S 4 ) in FIG. 5A ).
For example, the termination instruction supplied in the interrupt processing can be used.
<<Fifth Step>>
In the fifth step, the program terminates (see (S 5 ) in FIG. 5A ).
<<Interrupt Processing>>
The interrupt processing includes sixth to eighth steps described below (see FIG. 5B ).
<<Sixth Step>>
In the sixth step, the processing proceeds to the seventh step when a predetermined event has been supplied, whereas the processing proceeds to the eighth step when the predetermined event has not been supplied (see (S 6 ) in FIG. 5B ). For example, whether the predetermined event is supplied in a predetermined period or not can be a branch condition. Specifically, the predetermined period can be longer than 0 seconds and shorter than or equal to 5 seconds, preferably shorter than or equal to 1 second, further preferably shorter than or equal to 0.5 seconds, still further preferably shorter than or equal to 0.1 seconds.
<<Seventh Step>>
In the seventh step, the mode is changed (see (S 7 ) in FIG. 5B ). Specifically, the mode is changed to the second mode when the first mode has been selected, or the mode is changed to the first mode when the second mode has been selected.
<<Eighth Step>>
In the eighth step, the interrupt processing terminates (see (S 8 ) in FIG. 5B ).
<<Predetermined Event>>
For example, the following events can be used: events supplied using a pointing device such as a mouse (e.g., “click” and “drag”) and events supplied to a touch panel with a finger or the like used as a pointer (e.g., “tap”, “drag” and “swipe”).
For example, the position of a slide bar pointed by a pointer, the swipe speed, and the drag speed can be used as arguments assigned to an instruction associated with the predetermined event.
For example, data sensed by the sensor portion 250 is compared to the set threshold, and the compared results can be used for the event.
Specifically, a crown which can be pushed in a housing, a pressure sensitive sensor in contact with the crown, or the like can be used (see FIG. 3B ).
For example, a photoelectric conversion element provided in a housing can be used in the sensor portion 250 (see FIG. 3C ).
<<Instruction Associated with Predetermined Event>>
For example, the termination instruction can be associated with a predetermined event.
For example, “page-turning instruction” for switching displayed image information from one to another can be associated with a predetermined event. Note that a parameter for determining the page-turning speed or the like when the “page-turning instruction” is executed can be supplied using the predetermined event.
For example, “scroll instruction” for moving the display position of part of image information and displaying another part continuing from that part can be associated with a predetermined event. Note that a parameter for determining the moving speed of the display position or the like when the “scroll instruction” is executed can be supplied using the predetermined event.
For example, an instruction for generating image information can be associated with a predetermined event. Note that a parameter for determining the brightness of a generated image may be used for the ambient luminance sensed by the sensor portion 250 .
For example, an instruction for acquiring information distributed via a push service using the communication portion 290 can be associated with a predetermined event. Note that positional information sensed by the sensor portion 250 may be used for the determination of the presence or absence of a qualification for acquiring information. Specifically, the determination of the presence of a qualification for acquiring information may be taken when the user is in a predetermined class room, school, conference room, office, or building (see FIG. 3C ).
Note that this embodiment can be combined with any of the other embodiments in this specification as appropriate.
Embodiment 3
In this embodiment, the structure of a display panel of one embodiment of the present invention will be described with reference to FIGS. 6A to 6 B 2 , FIGS. 7A to 7C , FIG. 8 , and FIGS. 9A to 9 B 2 .
FIGS. 6A , 6 B 1 , and 6 B 2 illustrate the structure of a display panel 700 of one embodiment of the present invention. FIG. 6A is a bottom view of the display panel 700 of one embodiment of the present invention. FIG. 6 B 1 is a bottom view illustrating part of FIG. 6A . FIG. 6 B 2 is a bottom view omitting some components illustrated in FIG. 6 B 1 .
FIGS. 7A to 7C illustrate the structure of the display panel 700 of one embodiment of the present invention. FIG. 7A is a cross-sectional view taken along lines X 1 -X 2 , X 3 -X 4 , X 5 -X 6 , X 7 -X 8 , X 9 -X 10 , and X 11 -X 12 in FIG. 6A . FIG. 7B is a cross-sectional view illustrating the structure of part of the display panel and FIG. 7C is a cross-sectional view illustrating the structure of another part of the display panel.
FIG. 8 illustrates the structure of the display panel 700 of one embodiment of the present invention. FIG. 8 is a circuit diagram of a pixel circuit 530 ( i, j ) and a pixel circuit 530 ( i, j +1) which are included in the display panel 700 of one embodiment of the present invention.
FIGS. 9A , 9 B 1 , and 9 B 2 illustrate the structure of a display panel 700 of one embodiment of the present invention. FIG. 9A is a block diagram illustrating arrangement of pixels, wirings, or the like which can be used for the display panel 700 of one embodiment of the present invention. FIGS. 9 B 1 and 9 B 2 are schematic views illustrating the arrangement of openings 751 H which can be used for the display panel 700 of one embodiment of the present invention.
<Structure Example 1 of Display Panel>
The display panel 700 described in this embodiment includes a signal line S 1 ( j ) and a pixel 702 ( i, j ) (see FIGS. 6 B 1 and 6 B 2 ).
The pixel 702 ( i, j ) is electrically connected to the signal line S 1 ( j ).
The pixel 702 ( i, j ) includes a first display element 750 ( i, j ), a first conductive film, a second conductive film, an insulating film 501 C, the pixel circuit 530 ( i, j ), and a second display element 550 ( i, j ) (see FIG. 7A and FIG. 8 ).
The first conductive film is electrically connected to the first display element 750 ( i, j ) (see FIG. 7A ). For example, the first conductive film can be used for the first electrode 751 ( i, j ) of the first display element 750 ( i, j ).
The second conductive film has a region overlapping with the first conductive film. For example, the second conductive film can be used as a conductive film 512 B serving as a source electrode or a drain electrode of a transistor which can be used as a switch SW 1 .
The insulating film 501 C has a region interposed between the second conductive film and the first conductive film.
The pixel circuit 530 ( i, j ) is electrically connected to the second conductive film. For example, the transistor in which the second conductive film is used as the conductive film 512 B serving as a source electrode or a drain electrode can be used as the switch SW 1 of the pixel circuit 530 ( i, j ) (see FIG. 7A and FIG. 8 ).
The second display element 550 ( i, j ) is electrically connected to the pixel circuit 530 ( i, j ).
The insulating film 501 C includes an opening 591 A (see FIG. 7A ).
The second conductive film is electrically connected to the first conductive film in the opening 591 A. For example, the conductive film 512 B is electrically connected to the first electrode 751 ( i, j ) which also serves as the first conductive film.
The pixel circuit 530 ( i, j ) is electrically connected to the signal line S 1 ( j ) (see FIG. 8 ). Note that the conductive film 512 A is electrically connected to the signal line S 1 ( j ) (see FIG. 7A and FIG. 8 ).
The first electrode 751 ( i, j ) has an edge portion embedded in the insulating film 501 C.
Furthermore, the pixel circuit 530 ( i, j ) of the display panel described in this embodiment includes the switch SW 1 . The switch SW 1 includes a transistor that includes an oxide semiconductor.
The second display element 550 ( i, j ) of the display panel described in this embodiment has a viewing angle overlapping with part of a viewing angle of the first display element 750 ( i, j ). In other words, the second display element 550 ( i, j ) has a function of performing display in the same direction as any of display directions of the first display element 750 ( i, j ). For example, a dashed arrow in the drawing denotes the direction in which the first display element 750 ( i, j ) performs display by adjusting the intensity of external light reflection. In addition, a solid arrow in the drawing denotes the direction in which the second display element 550 ( i, j ) performs display (see FIG. 7A ).
In addition, the second display element 550 ( i, j ) of the display panel described in this embodiment has a function of displaying in a region surrounded by a region where the first display element 750 ( i, j ) performs display (see FIG. 9 B 1 or 9 B 2 ). Note that the first display element 750 ( i, j ) performs display in a region overlapping with the first electrode 751 ( i, j ) and that the second display element 550 ( i, j ) performs display in a region overlapping with the opening 751 H.
Furthermore, the first display element 750 ( i, j ) of the display panel described in this embodiment includes a reflective film which reflects incident light and has a function of adjusting the intensity of the reflected light. The reflective film has the opening 751 H. Note that for example, the first conductive film, the first electrode 751 ( i, j ), or the like can be used as the reflective film of the first display element 750 ( i, j ).
Furthermore, the second display element 550 ( i, j ) has a function of emitting light toward the opening 751 H.
In addition, the display panel described in this embodiment includes the pixel 702 ( i, j ), one pixel group consisting of pixels 702 ( i , 1 ) to 702 ( i, n ), another pixel group consisting of pixels 702 ( 1 , j ) to 702 ( m, j ), and a scan line G 1 ( i ) (see FIG. 9A ). Note that i is an integer greater than or equal to 1 and less than or equal to m, j is an integer greater than or equal to 1 and less than or equal to n, and each of m and n is an integer greater than or equal to 1.
The display panel described in this embodiment includes a scan line G 2 ( i ), a wiring CSCOM, and a wiring ANO.
The one pixel group consisting of the pixels 702 ( i , 1 ) to 702 ( i, n ) includes the pixel 702 ( i, j ), and are arranged in a row direction (indicated by an arrow R in the drawing).
The other pixel group consisting of the pixels 702 ( 1 , j ) to 702 ( m, j ) includes the pixel 702 ( i, j ), and are arranged in a column direction (indicated by an arrow C in the drawing) intersecting with the row direction.
The scan line G 1 ( i ) is electrically connected to group of the pixels 702 ( i , 1 ) to 702 ( i, n ) arranged in the row direction.
The signal line S 1 ( j ) is electrically connected to the other group of the pixels 702 ( 1 , j ) to 702 ( m, j ) arranged in the column direction.
For example, the pixel 702 ( i, j +1) adjacent to the pixel 702 ( i, j ) in the row direction includes an opening in a position different from that of the opening 751 H in the pixel 702 ( i, j ) (see FIG. 9 B 1 ).
For example, the pixel 702 ( i +1, j) adjacent to the pixel 702 ( i, j ) in the column direction includes an opening in a position different from that of the opening 751 H in the pixel 702 ( i, j ) (see FIG. 9 B 2 ). Note that for example, the first electrode 751 ( i, j ) can be used as the reflective film.
The display panel described in this embodiment includes a first display element, a first conductive film electrically connected to the first display element, a second conductive film having a region overlapping with the first conductive film, an insulating film having a region sandwiched between the second conductive film and the first conductive film, a pixel circuit electrically connected to the second conductive film, and a second display element electrically connected to the pixel circuit. The insulating film has an opening. The second conductive film is electrically connected to the first conductive film in the opening.
Accordingly, the first display element and the second display element which perform display using different methods can be driven, for example, with the pixel circuit which can be formed in the same process. As a result, a novel display panel that is highly convenient or reliable can be provided.
In addition, the display panel described in this embodiment includes a terminal 519 B and a conductive film 511 B (see FIG. 7A ).
The insulating film 501 C has a region interposed between the terminal 519 B and the conductive film 511 B. In addition, the insulating film 501 C includes an opening 591 B.
The terminal 519 B is electrically connected to the conductive film 511 B in the opening 591 B. In addition, the conductive film 511 B is electrically connected to the pixel circuit 530 ( i, j ). Note that for example, when the first electrode 751 ( i, j ) or the first conductive film is used as the reflective film, a surface serving as a contact with the terminal 519 B is oriented in the same direction as a surface of the first electrode 751 ( i, j ) that faces light incident to the first display element 750 ( i, j ).
Thus, power or signals can be supplied to the pixel circuit through the terminal. As a result, a novel display panel that is highly convenient or reliable can be provided.
In addition, the first display element 750 ( i, j ) of the display panel described in this embodiment includes a layer 753 containing a liquid-crystal material, the first electrode 751 ( i, j ), and a second electrode 752 . Note that the second electrode 752 is provided so that an electric field for controlling the alignment of the liquid crystal material is generated between the second electrode 752 and the first electrode 751 ( i, j ).
Furthermore, the display panel described in this embodiment includes an alignment film AF 1 and an alignment film AF 2 . The alignment film AF 2 is provided so that the layer 753 containing a liquid crystal material is interposed between the alignment films AF 1 and AF 2 .
In addition, the second display element 550 ( i, j ) of the display panel described in this embodiment includes a third electrode 551 ( i, j ), a fourth electrode 552 , and a layer 553 ( j ) containing a light-emitting organic compound.
The fourth electrode 552 has a region overlapping with the third electrode 551 ( i, j ). The layer 553 ( j ) containing a light-emitting organic compound is positioned between the third electrode 551 and the fourth electrode 552 . The third electrode 551 ( i, j ) is electrically connected to the pixel circuit 530 ( i, j ) in a contact portion 522 .
Moreover, the pixel 702 ( i, j ) of the display panel described in this embodiment includes a coloring film CF 1 , a light-blocking film BM, an insulating film 771 , and a functional film 770 P.
The coloring film CF 1 has a region overlapping with the first display element 750 ( i, j ). The light-blocking film BM has an opening in a region overlapping with the first display element 750 ( i, j ).
The insulating film 771 is positioned between the coloring film CF 1 and the layer 753 containing a liquid crystal material or between the light-blocking film BM and the layer 753 containing a liquid crystal material. Thus, unevenness due to the thickness of the coloring film CF 1 can be avoided. Alternatively, impurities can be prevented from being diffused from the light-blocking film BM, the coloring film CF 1 , or the like to the layer 753 containing a liquid crystal material.
The functional film 770 P has a region overlapping with the first display element 750 ( i, j ). The functional film 770 P is provided so that a substrate 770 is interposed between the functional film 770 P and the first display element 750 ( i, j ).
In addition, the display panel described in this embodiment includes a substrate 570 , the substrate 770 , and a functional layer 520 .
The substrate 770 has a region overlapping with the substrate 570 . The functional layer 520 is positioned between the substrates 570 and 770 .
The functional layer 520 includes the pixel circuit 530 ( i, j ), the second display element 550 ( i, j ), an insulating film 521 , and an insulating film 528 . Furthermore, the functional layer 520 includes an insulating film 518 and an insulating film 516 .
The insulating film 521 is positioned between the pixel circuit 530 ( i, j ) and the second display element 550 ( i, j ).
The insulating film 528 is positioned between the insulating film 521 and the substrate 570 and has an opening in a region overlapping with the second display element 550 ( i, j ). The insulating film 528 along the edge of the third electrode 551 can avoid a short circuit between the third electrode 551 and the fourth electrode.
The insulating film 518 has a region positioned between the insulating film 521 and the pixel circuit 530 ( i, j ). The insulating film 516 has a region positioned between the insulating film 518 and the pixel circuit 530 ( i, j ).
Moreover, the display panel described in this embodiment includes a bonding layer 505 , a sealant 705 , and a structure body KB 1 .
The bonding layer 505 is positioned between the functional layer 520 and the substrate 570 and has a function of bonding the functional layer 520 and the substrate 570 .
The sealant 705 is positioned between the functional layer 520 and the substrate 770 and has a function of bonding the functional layer 520 and the substrate 770 .
The structure body KB 1 has a function of making a predetermined gap between the functional layer 520 and the substrate 770 .
In addition, the display panel described in this embodiment includes a terminal 519 C, a conductive film 511 C, and a conductor CP.
The insulating film 501 C has a region interposed between the terminal 519 C and the conductive film 511 C. In addition, the insulating film 501 C has an opening 591 C.
The terminal 519 C is electrically connected to the conductive film 511 C in the opening 591 C. In addition, the conductive film 511 C is electrically connected to the pixel circuit 530 ( i, j ).
The conductor CP is interposed between the terminal 519 C and the second electrode 752 for electrically connecting the terminal 519 C and the second electrode 752 . For example, a conductive particle can be used as the conductor CP.
Moreover, the display panel described in this embodiment includes a driver circuit GD and a driver circuit SD (see FIGS. 6A and 9A ).
The driver circuit GD is electrically connected to the scan line G 1 ( i ). The driver circuit GD includes, for example, a transistor MD. Specifically, a transistor which includes a semiconductor film and can be formed in the same step as the transistor included in the pixel circuit 530 ( i, j ) can be used as the transistor MD (see FIGS. 7A and 7C ).
The driver circuit SD is electrically connected to the signal line S 1 ( j ). The driver circuit SD is electrically connected to a terminal using a conductive material, for example. The terminal can be formed in the same step as the terminal 519 B or the terminal 519 C.
Individual components of the display panel will be described below. Note that these components cannot be clearly distinguished and one component serves as another one or includes part of another one in some cases.
For example, the first conductive film can be used as the first electrode 751 ( i, j ). The first conductive film can be used as a reflective film.
In addition, the second conductive film can be used as the conductive film 512 B serving as a source electrode or a drain electrode of a transistor.
<<Structure Example 1>>
The display panel of one embodiment of the present invention includes the substrate 570 , the substrate 770 , the structure body KB 1 , the sealant 705 , or the bonding layer 505 .
In addition, the display panel of one embodiment of the present invention includes the functional layer 520 , the insulating film 521 , and the insulating film 528 .
In addition, the display panel of one embodiment of the present invention includes the signal line S 1 ( j ), the signal line S 2 ( j ), the scan line G 1 ( i ), the scan line G 2 ( i ), the wiring CSCOM, and the wiring ANO.
In addition, the display panel of one embodiment of the present invention includes the first conductive film or the second conductive film.
In addition, the display panel of one embodiment of the present invention includes the terminal 519 B, the terminal 519 C, the conductive film 511 B, or the conductive film 511 C.
In addition, the display panel of one embodiment of the present invention includes the pixel circuit 530 ( i, j ) or the switch SW 1 .
In addition, the display panel of one embodiment of the present invention includes the first display element 750 ( i, j ), the first electrode 751 ( i, j ), the reflective film, the opening 751 H, the layer 753 containing a liquid crystal material, and the second electrode 752 .
In addition, the display panel of one embodiment of the present invention includes the alignment film AF 1 , the alignment film AF 2 , the coloring film CF 1 , the light-blocking film BM, the insulating film 771 , and the functional film 770 P.
In addition, the display panel of one embodiment of the present invention includes the second display element 550 ( i, j ), the third electrode 551 ( i, j ), the fourth electrode 552 , or the layer 553 ( j ) containing a light-emitting organic compound.
Furthermore, the display panel of one embodiment of the present invention includes the insulating film 501 C.
In addition, the display panel of one embodiment of the present invention includes the driver circuit GD or the driver circuit SD.
<Substrate 570 >>
The substrate 570 and the like can be formed using a material having heat resistance high enough to withstand heat treatment in the manufacturing process. Specifically, a non-alkali glass which is polished to a thickness of approximately 0.7 mm or 0.1 mm can be used
For example, a large-sized glass substrate having any of the following sizes can be used as the substrate 570 and the like: the 6th generation (1500 mm×1850 mm), the 7th generation (1870 mm×2200 mm), the 8th generation (2200 mm×2400 mm), the 9th generation (2400 mm×2800 mm), and the 10th generation (2950 mm×3400 mm). Thus, a large-sized display device can be manufactured.
For the substrate 570 and the like, an organic material, an inorganic material, a composite material of an organic material and an inorganic material, or the like can be used. For example, an inorganic material such as glass, ceramic, or a metal can be used for the substrate 570 and the like.
Specifically, non-alkali glass, soda-lime glass, potash glass, crystal glass, quartz, sapphire, or the like can be used for the substrate 570 and the like. Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like can be used for the substrate 570 and the like. For example, a film of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, or the like can be used for the substrate 570 and the like. Stainless steel, aluminum, or the like can be used for the substrate 570 and the like.
For example, a single crystal semiconductor substrate or a polycrystalline semiconductor substrate of silicon or silicon carbide, a compound semiconductor substrate of silicon germanium, or an SOI substrate can be used as the substrate 570 and the like. Thus, a semiconductor element can be formed over the substrate 570 and the like.
For example, an organic material such as a resin, a resin film, or plastic can be used for the substrate 570 and the like. Specifically, a resin film or resin plate of polyester, polyolefin, polyamide, polyimide, polycarbonate, an acrylic resin, or the like can be used for the substrate 570 and the like.
For example, a composite material, such as a resin film to which a metal plate, a thin glass plate, or an inorganic film is bonded can be used for the substrate 570 and the like. For example, a composite material formed by dispersing a fibrous or particulate metal, glass, inorganic material, or the like into a resin film can be used for the substrate 570 and the like. For example, a composite material formed by dispersing a fibrous or particulate resin, organic material, or the like into an inorganic material can be used for the substrate 570 and the like.
A single-layer material or a material in which a plurality of layers are stacked can be used for the substrate 570 and the like. For example, a material in which a base, an insulating film that prevents diffusion of impurities contained in the base, and the like are stacked can be used for the substrate 570 and the like. Specifically, a material in which glass and one or a plurality of films that prevent diffusion of impurities contained in the glass and that are selected from a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and the like are stacked can be used for the substrate 570 and the like. Alternatively, a material in which a resin and a film for preventing diffusion of impurities that penetrate the resin, such as a silicon oxide film, a silicon nitride film, and a silicon oxynitride film are stacked can be used for the substrate 570 and the like.
Specifically, a resin film, a resin plate, a stack, or the like of polyester, polyolefin, polyamide, polyimide, polycarbonate, an acrylic resin, or the like can be used for the substrate 570 and the like.
Specifically, a material including polyester, polyolefin, polyamide (e.g., nylon or aramid), polyimide, polycarbonate, polyurethane, an acrylic resin, an epoxy resin, or a resin having a siloxane bond, such as silicone, can be used for the substrate 570 and the like.
Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), acrylic, or the like can be used for the substrate 570 and the like.
Alternatively, paper, wood, or the like can be used for the substrate 570 and the like.
For example, a flexible substrate can be used as the substrate 570 and the like.
Note that a transistor, a capacitor, or the like can be directly formed on the substrate. Alternatively, a transistor, a capacitor, or the like can be formed over a substrate that is for use in manufacturing processes and withstands heat applied in the processes, and then can be transferred to the substrate 570 or the like. Accordingly, a transistor, a capacitor, or the like can be formed over a flexible substrate.
<<Substrate 770 >>
For example, a light-transmitting material can be used for the substrate 770 . Specifically, a material selected from the materials used for the substrate 570 can be used for the substrate 770 . Specifically, a non-alkali glass which is polished to a thickness of approximately 0.7 mm or 0.1 mm can be used.
<<Structure Body KB 1 >>
For example, an organic material, an inorganic material, or a composite material of an organic material and an inorganic material can be used for the structure body KB 1 or the like. Thus, components between which the structure body KB 1 or the like is interposed can have a predetermined gap.
Specifically, for the structure body KB 1 or the like, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, an acrylic resin, or the like, or a composite material of plural kinds of resins selected from these can be used. Alternatively, a photosensitive material may be used.
<<Sealant 705 >>
For the sealant 705 or the like, an inorganic material, an organic material, a composite material of an inorganic material and an organic material, or the like can be used.
For example, an organic material such as a thermally fusible resin or a curable resin can be used for the sealant 705 or the like.
For the sealant 705 or the like, an organic material such as a reactive curable adhesive, a photo-curable adhesive, a thermosetting adhesive, and/or an anaerobic adhesive can be used.
Specifically, an adhesive containing an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a polyimide resin, an imide resin, a polyvinyl chloride (PVC) resin, a polyvinyl butyral (PVB) resin, or an ethylene vinyl acetate (EVA) resin, or the like can be used for the sealant 705 or the like.
<<Bonding Layer 505 >>
For example, a material that can be used for the sealant 705 can be used for the bonding layer 505 .
<<Insulating Film 521 >>
For example, an insulating inorganic material, an insulating organic material, or an insulating composite material containing an inorganic material and an organic material can be used for the insulating film 521 or the like.
Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or a material obtained by stacking any of these films can be used for the insulating film 521 or the like. For example, a film including any of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, and an aluminum oxide film, or a film including a material obtained by stacking any of these films can be used for the insulating film 521 or the like.
Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, an acrylic resin, or a stacked or composite material including resins selected from these, or the like can be used for the insulating film 521 or the like. Alternatively, a photosensitive material may be used.
Thus, for example, steps due to components overlapping with the insulating film 521 can be eliminated.
<<Insulating Film 528 >>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 528 or the like. Specifically, a 1-μm-thick film containing polyimide can be used for the insulating film 528 .
<<Insulating Film 501 C>>
For example, the material that can be used for the insulating film 521 can be used for the insulating film 501 C. Specifically, a material containing silicon and oxygen can be used for the insulating film 501 C. Thus, impurity diffusion into the pixel circuit or the second display element can be suppressed.
For example, a 200-nm-thick film containing silicon, oxygen, and nitrogen can be used as the insulating film 501 C.
Note that the insulating film 501 C includes the opening 591 A, 591 B, or 591 C.
<<Wiring, Terminal, Conductive Film>>
A conductive material can be used for a wiring or the like. Specifically, the conductive material can be used for the signal line S 1 ( j ), the signal line S 2 ( j ), the scan line G 1 ( i ), the scan line G 2 ( i ), the wiring CSCOM, the wiring ANO, the terminal 519 B, the terminal 519 C, the conductive film 511 B, the conductive film 511 C, or the like.
For example, an inorganic conductive material, an organic conductive material, a metal material, a conductive ceramic material, or the like can be used for the wiring or the like.
Specifically, a metal element selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium, and manganese, or the like can be used for the wiring or the like. Alternatively, an alloy including any of the above-described metal elements, or the like can be used for the wiring or the like. In particular, an alloy of copper and manganese is suitably used in microfabrication with the use of a wet etching method.
Specifically, a two-layer structure in which a titanium film is stacked over an aluminum film, a two-layer structure in which a titanium film is stacked over a titanium nitride film, a two-layer structure in which a tungsten film is stacked over a titanium nitride film, a two-layer structure in which a tungsten film is stacked over a tantalum nitride film or a tungsten nitride film, a three-layer structure in which a titanium film, an aluminum film, and a titanium film are stacked in this order, or the like can be used for the wiring or the like.
Specifically, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added can be used for the wiring or the like.
Specifically, a film containing graphene or graphite can be used for the wiring or the like.
For example, a film including graphene oxide is formed and is reduced, so that a film including graphene can be formed. As a reducing method, a method using heat, a method using a reducing agent, or the like can be employed.
Specifically, a conductive high molecule can be used for the wiring or the like.
<<First Conductive Film, Second Conductive Film>>
For example, the material that can be used for the wiring or the like can be used for the first conductive film or the second conductive film.
The first electrode 751 ( i, j ), the wiring, or the like can be used for the first conductive film.
The conductive film 512 B, the wiring, or the like of the transistor that can be used as the switch SW 1 can be used as the second conductive film.
<<Pixel Circuit 530 ( i, j )>>
The pixel circuit 530 ( i, j ) is electrically connected to the signal line S 1 ( j ), the signal line S 2 ( j ), the scan line G 1 ( i ), the scan line G 2 ( i ), the wiring CSCOM, and the wiring ANO (see FIG. 8 ).
The pixel circuit 530 ( i, j +1) is electrically connected to a signal line S 1 ( j +1), a signal line S 2 ( j +1), a scan line G 1 ( i ), a scan line G 2 ( i ), the wiring CSCOM, and the wiring ANO.
Note that in the case where a voltage used as a signal supplied to the signal line S 2 ( j ) is different from a voltage used as a signal supplied to the signal line S 1 ( j +1), the signal line S 1 ( j +1) is positioned apart from the signal line S 2 ( j ). Specifically, the signal line S 2 ( j +1) is positioned adjacent to the signal line S( j ).
The pixel circuit 530 ( i, j ) includes the switch SW 1 , a capacitor C 1 , a switch SW 2 , a transistor M, and a capacitor C 2 .
For example, a transistor including a gate electrode electrically connected to the scan line G 1 ( i ) and a first electrode electrically connected to the signal line S 1 ( j ) can be used as the switch SW 1 .
The capacitor C 1 includes a first electrode electrically connected to a second electrode of the transistor used as the switch SW 1 and a second electrode electrically connected to the wiring CSCOM.
For example, a transistor that includes a gate electrode electrically connected to the scan line G 2 ( i ) and includes a first electrode electrically connected to the signal line S 2 ( j ) can be used as the switch SW 2 .
The transistor M includes a gate electrode electrically connected to the second electrode of the transistor used as the switch SW 2 , and a first electrode electrically connected to the wiring ANO.
Note that a transistor that includes a semiconductor film provided between a gate electrode and a conductive film can be used as the transistor M. For example, a conductive film electrically connected to a wiring that can supply the same potential as the first electrode of the transistor M can be used.
The capacitor C 2 includes a first electrode electrically connected to a second electrode of a transistor used as the switch SW 2 and a second electrode electrically connected to the first electrode of the transistor M.
Note that the first electrode of the first display element 750 is electrically connected to the second electrode of the transistor used as the switch SW 1 , and the second electrode of the first display element 750 is electrically connected to the wiring VCOM 1 . Accordingly, the first display element 750 can be driven.
In addition, the first electrode of the second display element 550 is electrically connected to the second electrode of the transistor M and the second electrode of the second display element 550 is electrically connected to and the wiring VCOM 2 . Accordingly, the second display element 550 can be driven.
<<Switch SW 1 , Switch SW 2 , Transistor M, Transistor MD>>
For example, a bottom-gate transistor, a top-gate transistor, or the like can be used as the switch SW 1 , the switch SW 2 , the transistor M, the transistor MD, or the like.
For example, a transistor using a semiconductor containing an element of Group 14 for a semiconductor film can be used. Specifically, a semiconductor containing silicon can be used for the semiconductor film. For example, single crystal silicon, polysilicon, microcrystalline silicon, amorphous silicon, or the like can be used for the semiconductor film of the transistor.
For example, a transistor using an oxide semiconductor for a semiconductor film can be used. Specifically, an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc can be used for a semiconductor film.
For example, a transistor having a lower leakage current in an off state than a transistor that uses amorphous silicon for a semiconductor film can be used as the switch SW 1 , the switch SW 2 , the transistor M, the transistor MD, or the like. Specifically, a transistor using an oxide semiconductor for a semiconductor film 508 can be used as the switch SW 1 , the switch SW 2 , the transistor M, the transistor MD, or the like.
Thus, a pixel circuit can hold an image signal for a longer time than a pixel circuit including a transistor that uses amorphous silicon for a semiconductor film. Specifically, the selection signal can be supplied with a frequency of lower than 30 Hz, preferably lower than 1 Hz, and more preferably less than once per minute while flickering is suppressed. Consequently, eyestrain on a user of the information processing device can be reduced, and power consumption for driving can be reduced.
The transistor that can be used as the switch SW 1 includes the semiconductor film 508 and the conductive film 504 having a region overlapping with the semiconductor film 508 (see FIG. 7B ). Furthermore, the transistor that can be used as the switch SW 1 includes the conductive film 512 A and the conductive film 512 B.
Note that the conductive film 504 and the insulating film 506 serve as a gate electrode and a gate insulating film, respectively. Furthermore, the conductive film 512 A has one of a function as a source electrode and a function as a drain electrode, and the conductive film 512 B has the other.
In addition, a transistor that includes the semiconductor film 508 provided between the conductive film 504 and the conductive film 524 can be used as the transistor M (see FIG. 7C ).
A conductive film in which a 10-nm-thick film containing tantalum and nitrogen and a 300-nm-thick film containing copper are stacked in this order can be used as the conductive film 504 .
A material in which a 400-nm-thick film containing silicon and nitrogen and a 200-nm-thick film containing silicon, oxygen, and nitrogen are stacked can be used for the insulating film 506 .
A 25-nm-thick film containing indium, gallium, and zinc can be used as the semiconductor film 508 .
A conductive film in which a 50-nm-thick film containing tungsten, a 400-nm-thick film containing aluminum, and a 100-nm-thick film containing titanium are stacked in this order can be used as the conductive film 512 A or 512 B.
<<First Display Element 750 ( i, j )>>
For example, a display element having a function of controlling transmission or reflection of light can be used as the first display element 750 ( i, j ) or the like. For example, a combined structure of a liquid crystal element and a polarizing plate or a MEMS shutter display element can be used. Specifically, the use of a reflective display element can reduce the power consumption of a display panel. For example, a reflective liquid crystal display element can be used as the first display element 750 .
Specifically, a liquid crystal element driven in any of the following driving modes can be used: an in-plane-switching (IPS) mode, a twisted nematic (TN) mode, a fringe field switching (FFS) mode, an axially symmetric aligned micro-cell (ASM) mode, an optically compensated birefringence (OCB) mode, a ferroelectric liquid crystal (FLC) mode, an antiferroelectric liquid crystal (AFLC) mode, and the like.
In addition, a liquid crystal element that can be driven by, for example, a vertical alignment (VA) mode such as a multi-domain vertical alignment (MVA) mode, a patterned vertical alignment (PVA) mode, an electrically controlled birefringence (ECB) mode, a continuous pinwheel alignment (CPA) mode, or an advanced super view (ASV) mode can be used.
For example, thermotropic liquid crystal, low-molecular liquid crystal, high-molecular liquid crystal, polymer dispersed liquid crystal, ferroelectric liquid crystal, anti-ferroelectric liquid crystal, or the like can be used. A liquid crystal material that exhibits a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, or the like can be used.
Alternatively, a liquid crystal material that exhibits a blue phase can be used.
<<First Electrode 751 ( i, j )>>
For example, the material of the wiring or the like can be used for the first electrode 751 ( i, j ). Specifically, a reflective film can be used for the first electrode 751 ( i, j ).
<<Reflective Film>>
For example, a material reflecting visible light can be used for the reflective film. Specifically, a material containing silver can be used for the reflective film. For example, a material containing silver, palladium, and the like or a material containing silver, copper, and the like can be used for the reflective film.
The reflective film reflects, for example, light passing through the layer 753 containing a liquid crystal material. This allows the first display element 750 to serve as a reflective liquid crystal element. Alternatively, a material with an uneven surface can be used for the reflective film. In that case, incident light can be reflected in various directions so that a white image can be displayed.
Note that one embodiment of the present invention is not limited to the structure in which the first electrode 751 ( i, j ) is used as the reflective film. For example, a structure in which the reflective film is positioned between the layer 753 containing a liquid crystal material and the first electrode 751 ( i, j ) can be used. Alternatively, a structure in which the first electrode 751 ( i, j ) having light-transmitting properties is positioned between the reflective film and the layer 753 containing a liquid crystal material can be used.
<<Opening 751 H>>
If the ratio of the total area of the opening 751 H to the total area except for the opening is too high, display performed using the first display element 750 ( i, j ) is dark. If the ratio of the total area of the opening 751 H to the total area except for the opening is too low, display performed using the second display element 550 ( i, j ) is dark.
Also, if the area of the opening 751 H in the reflective film is too small, light emitted from the second display element 550 is not efficiently extracted.
The opening 751 H may have a polygonal shape, a quadrangular shape, an elliptical shape, a circular shape, a cross-like shape, or the like. The opening 751 H may also have a stripe shape, a slit-like shape, or a checkered pattern. The opening 751 H may be positioned close to an adjacent pixel. Preferably, the opening 751 H is positioned close to another pixel having a function of emitting light of the same color. In that case, a phenomenon in which light emitted from the second display element 550 enters a coloring film of the adjacent pixel (also called cross talk), can be suppressed.
<<Second Electrode 752 >>
For example, a material having a visible-light transmitting property and conductivity can be used for the second electrode 752 .
For example, a conductive oxide, a metal film thin enough to transmit light, or a metal nanowire can be used as the second electrode 752 .
Specifically, a conductive oxide containing indium can be used for the second electrode 752 . Alternatively, a metal thin film with a thickness more than or equal to 1 nm and less than or equal to 10 nm can be used for the second electrode 752 . Further alternatively, a metal nanowire containing silver can be used for the second electrode 752 .
Specifically, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, zinc oxide to which aluminum is added, or the like can be used for the second electrode 752 .
<<Alignment Films AF 1 and AF 2 >>
For example, the alignment films AF 1 and AF 2 can be formed with a material containing polyimide or the like. Specifically, it is possible to use a material formed to be aligned in a predetermined direction by a rubbing process or an optical alignment process.
For example, a film containing soluble polyimide can be used as the alignment film AF 1 or AF 2 .
<<Coloring Film CF 1 >>
A material transmitting light of a predetermined color can be used for the coloring film CF 1 . Thus, the coloring film CF 1 can be used as, for example, a color filter.
For example, a material transmitting light of blue, green, red, yellow, or white can be used for the coloring film CF 1 .
<<Light-Blocking Film BM>>
A material that prevents light transmission can be used for the light-blocking film BM. Thus, the light-blocking film BM can be used as, for example, a black matrix.
<<Insulating Film 771 >>
For example, polyimide, epoxy resin, acrylic resin, or the like can be used for the insulating film 771 .
<<Functional Film 770 P>>
For example, a polarizing plate, a retardation plate, a diffusing film, an anti-reflective film, a condensing film, or the like can be used as the functional film 770 P. Alternatively, a polarizing plate containing a dichromatic pigment can be used as the functional film 770 P.
Alternatively, an antistatic film preventing the attachment of dust, a water repellent film suppressing the attachment of stain, a hard coat film suppressing generation of a scratch in use, or the like can be used as the functional film 770 P.
<<Second Display Element 550 ( i, j )>>
For example, a light-emitting element can be used as the second display element 550 ( i, j ). Specifically, an organic electroluminescence element, an inorganic electroluminescence element, a light-emitting diode, or the like can be used for the second display element 550 ( i, j ).
For example, a stack body for emitting blue light, green light, or red light can be used as the layer 553 ( j ) containing a light-emitting organic compound.
For example, a stack body extending linearly in the column direction along the signal line S 1 ( j ) can be used as the layer 553 ( j ) containing a light-emitting organic compound. In addition, a stack body that extends linearly in the column direction along the signal line S 1 ( j +1) and emits light of a color different from that of the layer 553 ( j ) containing a light-emitting organic compound can be used as the layer 553 ( j +1) containing a light-emitting organic compound.
Alternatively, for example, a stack body for emitting white light can be used as the layer 553 ( j ) containing a light-emitting organic compound and the layer 553 ( j +1) containing a light-emitting organic compound. Specifically, a stack of a layer containing a light-emitting organic compound containing a fluorescent material that emits blue light, and a layer containing a material that is other than the fluorescent material and that emits green light and red light, or a layer containing a material that is other than the fluorescent material and that emits yellow light can be used as the layer 553 ( j ) containing a light-emitting organic compound and the layer 553 ( j +1) containing a light-emitting organic compound.
For example, a material that can be used for the wiring or the like can be used for the third electrode 551 ( i, j ) or the fourth electrode 552 .
For example, a material that transmits visible light and is selected from the materials used for the wiring or the like can be used for the third electrode 551 ( i, j ).
Specifically, conductive oxide, indium-containing conductive oxide, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, or the like can be used for the third electrode 551 ( i, j ). Alternatively, a metal film that is thin enough to transmit light can be used as the third electrode 551 ( i, j ).
For example, a material that reflects visible light and is selected from the materials used for the wiring or the like can be used for the fourth electrode 552 .
<<Driver Circuit GD>>
Any of a variety of sequential circuits, such as a shift register, can be used as the driver circuit GD. For example, the transistor MD, a capacitor, and the like can be used in the driver circuit GD. Specifically, a transistor including a semiconductor film that can be formed at the same step as the transistor M can be used.
The transistor MD can have a structure different from that of the transistor used as the switch SW 1 . Specifically, a transistor including the conductive film 524 can be used as the transistor MD (see FIG. 7C ).
The semiconductor film 508 is positioned between the conductive film 504 and the conductive film 524 , the insulating film 516 is positioned between the conductive film 524 and the semiconductor film 508 , and the insulating film 506 is positioned between the semiconductor film 508 and the conductive film 504 . For example, the conductive film 524 is electrically connected to a wiring supplying the same potential as that supplied to the conductive film 504 .
Note that the transistor MD can have the same structure as the transistor M.
<<Driver Circuit SD>>
For example, an integrated circuit can be used in the driver circuit SD. Specifically, an integrated circuit formed on a silicon substrate can be used as the driver circuit SD.
For example, a chip on glass (COG) method can be used to mount the driver circuit SD on a pad electrically connected to the pixel circuit 530 ( i, j ). Specifically, an anisotropic conductive film can be used to mount the integrated circuit on the pad.
Note that the pad can be formed in the same step as the terminal 519 B or 519 C.
<Structure Example 2 of Display Panel>
FIGS. 17A and 17B illustrate the structure of a display panel 700 B of one embodiment of the present invention. FIG. 17A is a cross-sectional view taken along lines X 1 -X 2 , X 3 -X 4 , X 5 -X 6 , X 7 -X 8 , X 9 -X 10 , and X 11 -X 12 in FIG. 6A . FIG. 17B is a cross-sectional view illustrating part of the display panel.
Note that the display panel 700 B is different from the display panel 700 in FIGS. 7A to 7C in including a top-gate transistor instead of the bottom-gate transistor. Described below are different structures, and the above description is referred to for similar structures.
<<Switch SW 1 B, Transistor MB, Transistor MDB>>
A transistor that can be used as a switch SW 1 B, and transistors MB and MDB include the conductive film 504 having a region overlapping with the insulating film 501 C and the semiconductor film 508 having a region positioned between the insulating film 501 C and the conductive film 504 . Note that the conductive film 504 serves as a gate electrode (see FIG. 17B ).
The semiconductor film 508 includes a first region 508 A, a second region 508 B, and a third region 508 C. The first region 508 A and the second region 508 B do not overlap with the conductive film 504 . The third region 508 C lies between the first region 508 A and the second region 508 B and overlaps with the conductive film 504 .
The transistor MDB includes the insulating film 506 between the third region 508 C and the conductive film 504 . Note that the insulating film 506 serves as a gate insulating film.
The first region 508 A and the second region 508 B have a lower resistivity than the third region 508 C, and serve as a source region or a drain region.
Note that the first region 508 A and the second region 508 B can be formed in the semiconductor film 508 by, for example, a method for controlling the resistivity of the oxide semiconductor, which is described in detail in the end of this embodiment. Specifically, plasma treatment using a gas containing a rare gas can be employed.
Furthermore, for example, the conductive film 504 can be used as a mask, in which case the shape of part of the third region 508 C can be the same as the shape of an end portion of the conductive film 504 in a self-aligned manner.
The transistor MDB includes the conductive films 512 A and 512 B which are in contact with the first region 508 A and the second region 508 B, respectively. The conductive films 512 A and 512 B serve as a source electrode or a drain electrode.
The transistor that can be formed in the same process as the transistor MDB can be used as the transistor MB.
<Method for Controlling Resistivity of Oxide Semiconductor>
The method for controlling the resistivity of an oxide semiconductor film will be described.
An oxide semiconductor film with a certain resistivity can be used for the semiconductor film 508 or the conductive film 524 .
For example, the resistivity of an oxide semiconductor film can be controlled by a method for controlling the concentration of impurities such as hydrogen and water contained in the oxide semiconductor film and/or the oxygen vacancies in the film.
Specifically, plasma treatment can be used as a method for increasing or decreasing the concentration of impurities such as hydrogen and water and/or the oxygen vacancies in the film.
Specifically, plasma treatment using a gas containing one or more kinds selected from a rare gas (He, Ne, Ar, Kr, Xe), hydrogen, boron, phosphorus, and nitrogen can be employed. For example, plasma treatment in an Ar atmosphere, plasma treatment in a mixed gas atmosphere of Ar and hydrogen, plasma treatment in an ammonia atmosphere, plasma treatment in a mixed gas atmosphere of Ar and ammonia, or plasma treatment in a nitrogen atmosphere can be employed. Thus, the oxide semiconductor film can have a high carrier density and a low resistivity.
Alternatively, hydrogen, boron, phosphorus, or nitrogen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, a plasma immersion ion implantation method, or the like, so that the oxide semiconductor film can have a low resistivity.
Alternatively, an insulating film containing hydrogen is formed in contact with the oxide semiconductor film, and the hydrogen is diffused from the insulating film to the oxide semiconductor film, so that the oxide semiconductor film can have a high carrier density and a low resistivity.
For example, an insulating film with a hydrogen concentration of greater than or equal to 1×10 22 atoms/cm 3 is formed in contact with the oxide semiconductor film, in which case hydrogen can be effectively supplied to the oxide semiconductor film. Specifically, a silicon nitride film can be used as the insulating film formed in contact with the oxide semiconductor film.
Hydrogen contained in the oxide semiconductor film reacts with oxygen bonded to a metal atom to be water, and an oxygen vacancy is formed in a lattice from which oxygen is released (or a portion from which oxygen is released). Due to entry of hydrogen into the oxygen vacancy, an electron serving as a carrier is generated in some cases. Furthermore, bonding of part of hydrogen to oxygen bonded to a metal atom causes generation of an electron serving as a carrier in some cases. Thus, the oxide semiconductor film can have a high carrier density and a low resistivity.
Specifically, an oxide semiconductor with a hydrogen concentration measured by secondary ion mass spectrometry (SIMS) of greater than or equal to 8×10 19 atoms/cm 3 , preferably greater than or equal to 1×10 20 atoms/cm 3 , more preferably greater than or equal to 5×10 20 atoms/cm 3 can be suitably used for the conductive film 524 .
On the other hand, an oxide semiconductor with a high resistivity can be used for a semiconductor film where a channel of a transistor is formed, specifically, for the semiconductor film 508 .
For example, an insulating film containing oxygen, i.e., an insulating film capable of releasing oxygen, is formed in contact with an oxide semiconductor film, and the oxygen is supplied from the insulating film to the oxide semiconductor film, so that oxygen vacancies in the film or at the interface can be filled. Thus, the oxide semiconductor film can have a high resistivity.
For example, a silicon oxide film or a silicon oxynitride film can be used as the insulating film capable of releasing oxygen.
The oxide semiconductor film in which oxygen vacancies are filled and the hydrogen concentration is reduced can be referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film. The term “substantially intrinsic” refers to the state in which an oxide semiconductor film has a carrier density lower than 8×10 11 /cm 3 , preferably lower than 1×10 11 /cm 3 , further preferably lower than 1×10 10 /cm 3 . A highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has few carrier generation sources and thus can have a low carrier density. The highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states and accordingly can have a low density of trap states.
Furthermore, a transistor including the highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has an extremely low off-state current; even when an element has a channel width of 1×10 6 μm and a channel length L of 10 μm, the off-state current can be lower than or equal to the measurement limit of a semiconductor parameter analyzer, that is, lower than or equal to 1×10 −13 A, at a voltage (drain voltage) between a source electrode and a drain electrode of from 1 V to 10 V.
The transistor including a channel region formed in the oxide semiconductor film that is a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film can have a small change in electrical characteristics and high reliability.
Specifically, an oxide semiconductor has a hydrogen concentration which is measured by secondary ion mass spectrometry (SIMS) of lower than or equal to 2×10 20 atoms/cm 3 , preferably lower than or equal to 5×10 19 atoms/cm 3 , more preferably lower than or equal to 1×10 19 atoms/cm 3 , more preferably lower than 5×10 18 atoms/cm 3 , more preferably lower than or equal to 1×10 18 atoms/cm 3 , more preferably lower than or equal to 5×10 17 atoms/cm 3 , more preferably lower than or equal to 1×10 16 atoms/cm 3 can be favorably used for a semiconductor where a channel of a transistor is formed.
Note that an oxide semiconductor film that has a higher hydrogen concentration and/or a larger number of oxygen vacancies and that has a lower resistivity than the semiconductor film 508 is used as the conductive film 524 .
Furthermore, a film whose hydrogen concentration is twice or more, preferably ten times or more that in the semiconductor film 508 can be used as in the conductive film 524 .
Moreover, a film whose resistivity is higher than or equal to 1×10 −8 times and lower than 1×10 −1 times the resistivity of the semiconductor film 508 can be used as the conductive film 524 .
Specifically, a film with a resistivity higher than or equal to 1×10 −3 Ωcm and lower than 1×10 4 Ωcm, preferably higher than or equal to 1×10 −3 Ωcm and lower than 1×10 −1 Ωcm can be used as the conductive film 524 .
Note that this embodiment can be combined with any of the other embodiments in this specification as appropriate.
Embodiment 4
In this embodiment, the structure of a transistor which can be used for the display panel of one embodiment of the present invention will be described with reference to FIGS. 10A to 10D .
<Structure Example of Semiconductor Device>
FIG. 10A is a top view of the transistor 100 . FIG. 10C is a cross-sectional view taken along the section line X 1 -X 2 in FIG. 10A . FIG. 10D is a cross-sectional view taken along the section line Y 1 -Y 2 in FIG. 10A . Note that in FIG. 10A , some components of the transistor 100 (e.g., an insulating film serving as a gate insulating film) are not illustrated to avoid complexity. In some cases, the direction of the section line X 1 -X 2 is referred to as a channel length direction and the direction of the section line Y 1 -Y 2 is referred to as a channel width direction. As in FIG. 10A , some components might not be illustrated in some top views of transistors described below.
Note that the transistor 100 can be used in the display panel 700 or the like described in Embodiment 3.
For example, when the transistor 100 is used as the switch SW 1 , a substrate 102 , a conductive film 104 , a stacked film of an insulating film 106 and an insulating film 107 , an oxide semiconductor film 108 , a conductive film 112 a , a conductive film 112 b , a stacked film of an insulating film 114 and an insulating film 116 , and an insulating film 118 can be referred to as the insulating film 501 C, the conductive film 504 , the insulating film 506 , the semiconductor film 508 , the conductive film 512 A, the conductive film 512 B, the insulating film 516 , and the insulating film 518 , respectively.
The transistor 100 includes the conductive film 104 functioning as a gate electrode over the substrate 102 , the insulating film 106 over the substrate 102 and the conductive film 104 , the insulating film 107 over the insulating film 106 , the oxide semiconductor film 108 over the insulating film 107 , and the conductive films 112 a and 112 b functioning as source and drain electrodes electrically connected to the oxide semiconductor film 108 . Over the transistor 100 , specifically, over the conductive films 112 a and 112 b and the oxide semiconductor film 108 , the insulating films 114 , 116 , and 118 are provided. The insulating films 114 , 116 , and 118 function as protective insulating films for the transistor 100 .
The oxide semiconductor film 108 includes a first oxide semiconductor film 108 a on the conductive film 104 side and a second oxide semiconductor film 108 b over the first oxide semiconductor film 108 a . The conductive film 104 serves as a gate electrode. Furthermore, the insulating films 106 and 107 function as gate insulating films of the transistor 100 .
An In-M oxide (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf) or an In-M-Zn oxide can be used for the oxide semiconductor film 108 . It is particularly preferable to use an In-M-Zn oxide for the oxide semiconductor film 108 .
The first oxide semiconductor film 108 a includes a first region in which the atomic proportion of In is larger than the atomic proportion of M. The second oxide semiconductor film 108 b includes a second region in which the atomic proportion of In is smaller than that in the first oxide semiconductor film 108 a . The second region includes a portion thinner than the first region.
The first oxide semiconductor film 108 a including the first region in which the atomic proportion of In is larger than that of M can increase the field-effect mobility (also simply referred to as mobility or μFE) of the transistor 100 . Specifically, the field-effect mobility of the transistor 100 can exceed 10 cm 2 /Vs.
For example, the use of the transistor with high field-effect mobility for a gate driver that generates a gate signal (specifically, a demultiplexer connected to an output terminal of a shift register included in a gate driver) allows a semiconductor device or a display device to have a narrow frame.
On the other hand, the first oxide semiconductor film 108 a including the first region in which the atomic proportion of In is larger than that of M makes it easier to change electrical characteristics of the transistor 100 in light irradiation. However, in the semiconductor device of one embodiment of the present invention, the second oxide semiconductor film 108 b is formed over the first oxide semiconductor film 108 a . In addition, the thickness of the portion including the channel region and the vicinity of the channel region in the second oxide semiconductor film 108 b is smaller than the thickness of the first oxide semiconductor film 108 a.
Furthermore, the second oxide semiconductor film 108 b includes the second region in which the atomic proportion of In is smaller than that in the first oxide semiconductor film 108 a and thus has larger Eg than the first oxide semiconductor film 108 a . For this reason, the oxide semiconductor film 108 which is a layered structure of the first oxide semiconductor film 108 a and the second oxide semiconductor film 108 b has high resistance to a negative bias stress test with light irradiation.
The amount of light absorbed by the oxide semiconductor film 108 can be reduced during light irradiation. As a result, the change in electrical characteristics of the transistor 100 due to light irradiation can be reduced. In the semiconductor device of one embodiment of the present invention, the insulating film 114 or the insulating film 116 includes excess oxygen. This structure can further reduce the change in electrical characteristics of the transistor 100 due to light irradiation.
Here, the oxide semiconductor film 108 is described in detail with reference to FIG. 10B .
FIG. 10B is a cross-sectional enlarged view of the oxide semiconductor film 108 and the vicinity thereof in the transistor 100 illustrated in FIG. 10C .
In FIG. 10B , t 1 , t 2 - 1 , and t 2 - 2 denote a thickness of the first oxide semiconductor film 108 a , one thickness of the second oxide semiconductor film 108 b , and the other thickness of the second oxide semiconductor film 108 b , respectively. The second oxide semiconductor film 108 b over the first oxide semiconductor film 108 a prevents the first oxide semiconductor film 108 a from being exposed to an etching gas, an etchant, or the like when the conductive films 112 a and 112 b are formed. This is why the first oxide semiconductor film 108 a is not or is hardly reduced in thickness. In contrast, in the second oxide semiconductor film 108 b , a portion not overlapping with the conductive films 112 a and 112 b is etched by formation of the conductive films 112 a and 112 b , so that a depression is formed in the etched region. In other words, a thickness of the second oxide semiconductor film 108 b in a region overlapping with the conductive films 112 a and 112 b is t 2 - 1 , and a thickness of the second oxide semiconductor film 108 b in a region not overlapping with the conductive films 112 a and 112 b is t 2 - 2 .
As for the relationships between the thicknesses of the first oxide semiconductor film 108 a and the second oxide semiconductor film 108 b , t 2 - 1 >t 1 >t 2 - 2 is preferable. A transistor with the thickness relationships can have high field-effect mobility and less variation in threshold voltage in light irradiation.
When oxygen vacancy is formed in the oxide semiconductor film 108 included in the transistor 100 , electrons serving as carriers are generated; as a result, the transistor 100 tends to be normally-on. Therefore, for stable transistor characteristics, it is important to reduce oxygen vacancy in the oxide semiconductor film 108 , particularly oxygen vacancy in the first oxide semiconductor film 108 a . In the structure of the transistor of one embodiment of the present invention, excess oxygen is introduced into an insulating film over the oxide semiconductor film 108 , here, the insulating film 114 and/or the insulating film 116 over the oxide semiconductor film 108 , whereby oxygen is moved from the insulating film 114 and/or the insulating film 116 to the oxide semiconductor film 108 to fill oxygen vacancy in the oxide semiconductor film 108 , particularly in the first oxide semiconductor film 108 a.
Note that it is preferable that the insulating films 114 and 116 each include a region (oxygen excess region) including oxygen in excess of that in the stoichiometric composition. In other words, the insulating films 114 and 116 are insulating films capable of releasing oxygen. Note that the oxygen excess region is formed in the insulating films 114 and 116 in such a manner that oxygen is introduced into the insulating films 114 and 116 after the deposition, for example. As a method for introducing oxygen, an ion implantation method, an ion doping method, a plasma immersion ion implantation method, plasma treatment, or the like may be employed.
In order to fill oxygen vacancy in the first oxide semiconductor film 108 a , the thickness of the portion including the channel region and the vicinity of the channel region in the second oxide semiconductor film 108 b is preferably small, and t 2 - 2 <t 1 is preferably satisfied. For example, the thickness of the portion including the channel region and the vicinity of the channel region in the second oxide semiconductor film 108 b is preferably more than or equal to 1 nm and less than or equal to 20 nm, more preferably more than or equal to 3 nm and less than or equal to 10 nm.
Other constituent elements of the semiconductor device of this embodiment are described below in detail.
<<Substrate>>
There is no particular limitation on the property of a material and the like of the substrate 102 as long as the material has heat resistance enough to withstand at least heat treatment to be performed later. For example, a glass substrate, a ceramic substrate, a quartz substrate, or a sapphire substrate may be used as the substrate 102 .
Alternatively, a single crystal semiconductor substrate or a polycrystalline semiconductor substrate of silicon or silicon carbide, a compound semiconductor substrate of silicon germanium, an SOI substrate, or the like can be used.
Alternatively, any of these substrates provided with a semiconductor element may be used as the substrate 102 .
Note that in the case where a glass substrate is used as the substrate 102 , a large substrate having any of the following sizes can be used: the 6th generation (1500 mm×1850 mm), the 7th generation (1870 mm×2200 mm), the 8th generation (2200 mm×2400 mm), the 9th generation (2400 mm×2800 mm), and the 10th generation (2950 mm×3400 mm). Thus, a large display device can be manufactured.
Alternatively, a flexible substrate may be used as the substrate 102 , and the transistor 100 may be provided directly on the flexible substrate. Alternatively, a separation layer may be provided between the substrate 102 and the transistor 100 . The separation layer can be used when part or the whole of a semiconductor device formed over the separation layer is separated from the substrate 102 and transferred onto another substrate. In such a case, the transistor 100 can be transferred to a substrate having low heat resistance or a flexible substrate as well.
<<Conductive Film Functioning as Gate Electrode, Source Electrode, and Drain Electrode>>
The conductive film 104 functioning as a gate electrode and the conductive films 112 a and 112 b functioning as a source electrode and a drain electrode, respectively, can each be formed using a metal element selected from chromium (Cr), copper (Cu), aluminum (Al), gold (Au), silver (Ag), zinc (Zn), molybdenum (Mo), tantalum (Ta), titanium (Ti), tungsten (W), manganese (Mn), nickel (Ni), iron (Fe), and cobalt (Co); an alloy including any of these metal elements as its component; an alloy including a combination of any of these metal elements; or the like.
Furthermore, the conductive films 104 , 112 a , and 112 b may have a single-layer structure or a stacked-layer structure of two or more layers. For example, a single-layer structure of an aluminum film including silicon, a two-layer structure in which a titanium film is stacked over an aluminum film, a two-layer structure in which a titanium film is stacked over a titanium nitride film, a two-layer structure in which a tungsten film is stacked over a titanium nitride film, a two-layer structure in which a tungsten film is stacked over a tantalum nitride film or a tungsten nitride film, and a three-layer structure in which a titanium film, an aluminum film, and a titanium film are stacked in this order can be given. Alternatively, an alloy film or a nitride film in which aluminum and one or more elements selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium are combined may be used.
The conductive films 104 , 112 a , and 112 b can be formed using a light-transmitting conductive material such as indium tin oxide, indium oxide including tungsten oxide, indium zinc oxide including tungsten oxide, indium oxide including titanium oxide, indium tin oxide including titanium oxide, indium zinc oxide, or indium tin oxide to which silicon oxide is added.
A Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti) may be used for the conductive films 104 , 112 a , and 112 b . Use of a Cu—X alloy film enables the manufacturing cost to be reduced because wet etching process can be used in the processing.
<<Insulating Film Functioning as Gate Insulating Film>>
As each of the insulating films 106 and 107 functioning as gate insulating films of the transistor 100 , an insulating film including at least one of the following films formed by a plasma enhanced chemical vapor deposition (PECVD) method, a sputtering method, or the like can be used: a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film. Note that instead of a stacked-layer structure of the insulating films 106 and 107 , an insulating film of a single layer formed using a material selected from the above or an insulating film of three or more layers may be used.
The insulating film 106 has a function as a blocking film which inhibits penetration of oxygen. For example, in the case where excess oxygen is supplied to the insulating film 107 , the insulating film 114 , the insulating film 116 , and/or the oxide semiconductor film 108 , the insulating film 106 can inhibit penetration of oxygen.
Note that the insulating film 107 that is in contact with the oxide semiconductor film 108 functioning as a channel region of the transistor 100 is preferably an oxide insulating film and preferably includes a region including oxygen in excess of the stoichiometric composition (oxygen-excess region). In other words, the insulating film 107 is an insulating film capable of releasing oxygen. In order to provide the oxygen excess region in the insulating film 107 , the insulating film 107 is formed in an oxygen atmosphere, for example. Alternatively, the oxygen excess region may be formed by introduction of oxygen into the insulating film 107 after the deposition. As a method for introducing oxygen, an ion implantation method, an ion doping method, a plasma immersion ion implantation method, plasma treatment, or the like may be employed.
In the case where hafnium oxide is used for the insulating film 107 , the following effect is attained. Hafnium oxide has a higher dielectric constant than silicon oxide and silicon oxynitride. Therefore, by using hafnium oxide, the thickness of the insulating film 107 can be made large as compared with the case where silicon oxide is used; thus, leakage current due to tunnel current can be low. That is, it is possible to provide a transistor with a low off-state current. Moreover, hafnium oxide with a crystalline structure has higher dielectric constant than hafnium oxide with an amorphous structure. Therefore, it is preferable to use hafnium oxide with a crystalline structure in order to provide a transistor with a low off-state current. Examples of the crystalline structure include a monoclinic crystal structure and a cubic crystal structure. Note that one embodiment of the present invention is not limited thereto.
In this embodiment, a silicon nitride film is formed as the insulating film 106 , and a silicon oxide film is formed as the insulating film 107 . The silicon nitride film has a higher dielectric constant than a silicon oxide film and needs a larger thickness for capacitance equivalent to that of the silicon oxide film. Thus, when the silicon nitride film is included in the gate insulating film of the transistor 150 , the physical thickness of the insulating film can be increased. This makes it possible to reduce a decrease in withstand voltage of the transistor 100 and furthermore to increase the withstand voltage, thereby reducing electrostatic discharge damage to the transistor 100 .
<<Oxide Semiconductor Film>>
The oxide semiconductor film 108 can be formed using the materials described above.
In the case where the oxide semiconductor film 108 includes In-M-Zn oxide, it is preferable that the atomic ratio of metal elements of a sputtering target used for forming the In-M-Zn oxide satisfy In≧M and Zn≧M. As the atomic ratio of metal elements of such a sputtering target, In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=2:1:3, In:M:Zn=3:1:2, and In:M:Zn=4:2:4.1 are preferable.
In the case where the oxide semiconductor film 108 is formed of In-M-Zn oxide, it is preferable to use a target including polycrystalline In-M-Zn oxide as the sputtering target. The use of the target including polycrystalline In-M-Zn oxide facilitates formation of the oxide semiconductor film 108 having crystallinity. Note that the atomic ratios of metal elements in the formed oxide semiconductor film 108 vary from the above atomic ratio of metal elements of the sputtering target within a range of ±40% as an error. For example, when a sputtering target with an atomic ratio of In to Ga and Zn of 4:2:4.1 is used, the atomic ratio of In to Ga and Zn in the oxide semiconductor film 108 may be 4:2:3 or in the vicinity of 4:2:3.
The first oxide semiconductor film 108 a can be formed using the sputtering target having an atomic ratio of In:M:Zn=2:1:3, In:M:Zn=3:1:2, or In:M:Zn=4:2:4.1. The second oxide semiconductor film 108 b can be formed using the sputtering target having an atomic ratio of In:M:Zn=1:1:1 or In:M:Zn=1:1:1.2. Note that the atomic ratio of metal elements in a sputtering target used for forming the second oxide semiconductor film 108 b does not necessarily satisfy In≧M and Zn≧M, and may satisfy In≧M and Zn<M, such as InM:Zn=1:3:2.
The energy gap of the oxide semiconductor film 108 is 2 eV or more, preferably 2.5 eV or more, further preferably 3 eV or more. The use of an oxide semiconductor having a wide energy gap can reduce off-state current of the transistor 100 . In particular, an oxide semiconductor film having an energy gap more than or equal to 2 eV, preferably more than or equal to 2 eV and less than or equal to 3.0 eV is preferably used as the first oxide semiconductor film 108 a , and an oxide semiconductor film having an energy gap more than or equal to 2.5 eV and less than or equal to 3.5 eV is preferably used as the second oxide semiconductor film 108 b . Furthermore, the second oxide semiconductor film 108 b preferably has a higher energy gap than that of the first oxide semiconductor film 108 a.
Each thickness of the first oxide semiconductor film 108 a and the second oxide semiconductor film 108 b is more than or equal to 3 nm and less than or equal to 200 nm, preferably more than or equal to 3 nm and less than or equal to 100 nm, more preferably more than or equal to 3 nm and less than or equal to 50 nm. Note that the above-described thickness relationships between them are preferably satisfied.
An oxide semiconductor film with low carrier density is used as the second oxide semiconductor film 108 b . For example, the carrier density of the second oxide semiconductor film 108 b is lower than or equal to 1×10 17 /cm 3 , preferably lower than or equal to 1×10 15 /cm 3 , further preferably lower than or equal to 1×10 13 /cm 3 , still further preferably lower than or equal to 1×10 11 /cm 3 .
Note that, without limitation to the compositions and materials described above, a material with an appropriate composition may be used depending on required semiconductor characteristics and electrical characteristics (e.g., field-effect mobility and threshold voltage) of a transistor. Furthermore, in order to obtain required semiconductor characteristics of a transistor, it is preferable that the carrier density, the impurity concentration, the defect density, the atomic ratio of a metal element to oxygen, the interatomic distance, the density, and the like of the first oxide semiconductor film 108 a and the second oxide semiconductor film 108 b be set to be appropriate.
Note that it is preferable to use, as the first oxide semiconductor film 108 a and the second oxide semiconductor film 108 b , an oxide semiconductor film in which the impurity concentration is low and the density of defect states is low, in which case the transistor can have more excellent electrical characteristics. Here, the state in which the impurity concentration is low and the density of defect states is low (the amount of oxygen vacancy is small) is referred to as “highly purified intrinsic” or “substantially highly purified intrinsic”. A highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has few carrier generation sources, and thus can have a low carrier density. Thus, a transistor in which a channel region is formed in the oxide semiconductor film rarely has a negative threshold voltage (is rarely normally on). A highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states and accordingly has a low density of trap states in some cases. Furthermore, the highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has an extremely low off-state current; even when an element has a channel width of 1×10 6 μm and a channel length L of 10 μm, the off-state current can be less than or equal to the measurement limit of a semiconductor parameter analyzer, that is, less than or equal to 1×10 −13 A, at a voltage (drain voltage) between a source electrode and a drain electrode of from 1 V to 10 V.
Accordingly, the transistor in which the channel region is formed in the highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film can have a small change in electrical characteristics and high reliability. Charges trapped by the trap states in the oxide semiconductor film take a long time to be released and may behave like fixed charges. Thus, the transistor whose channel region is formed in the oxide semiconductor film having a high density of trap states has unstable electrical characteristics in some cases. As examples of the impurities, hydrogen, nitrogen, alkali metal, alkaline earth metal, and the like are given.
Hydrogen included in the oxide semiconductor film reacts with oxygen bonded to a metal atom to be water, and also causes oxygen vacancy in a lattice from which oxygen is released (or a portion from which oxygen is released). Due to entry of hydrogen into the oxygen vacancy, an electron serving as a carrier is generated in some cases. Furthermore, in some cases, bonding of part of hydrogen to oxygen bonded to a metal atom causes generation of an electron serving as a carrier. Thus, a transistor including an oxide semiconductor film which contains hydrogen is likely to be normally on. Accordingly, it is preferable that hydrogen be reduced as much as possible in the oxide semiconductor film 108 . Specifically, in the oxide semiconductor film 108 , the concentration of hydrogen which is measured by SIMS is lower than or equal to 2×10 20 atoms/cm 3 , preferably lower than or equal to 5×10 19 atoms/cm 3 , further preferably lower than or equal to 1×10 19 atoms/cm 3 , further preferably lower than or equal to 5×10 18 atoms/cm 3 , further preferably lower than or equal to 1×10 18 atoms/cm 3 , further preferably lower than or equal to 5×10 17 atoms/cm 3 , and further preferably lower than or equal to 1×10 16 atoms/cm 3 .
When silicon or carbon that is one of elements belonging to Group 14 is included in the first oxide semiconductor film 108 a , oxygen vacancy is increased in the first oxide semiconductor film 108 a , and the first oxide semiconductor film 108 a becomes an n-type film. Thus, the concentration of silicon or carbon (the concentration is measured by SIMS) in the first oxide semiconductor film 108 a or the concentration of silicon or carbon (the concentration is measured by SIMS) in the vicinity of an interface with the first oxide semiconductor film 108 a is set to be lower than or equal to 2×10 18 atoms/cm 3 , preferably lower than or equal to 2×10 17 atoms/cm 3 .
In addition, the concentration of alkali metal or alkaline earth metal of the first oxide semiconductor film 108 a , which is measured by SIMS, is lower than or equal to 1×10 18 atoms/cm 3 , preferably lower than or equal to 2×10 16 atoms/cm 3 . Alkali metal and alkaline earth metal might generate carriers when bonded to an oxide semiconductor, in which case the off-state current of the transistor might be increased. Therefore, it is preferable to reduce the concentration of alkali metal or alkaline earth metal of the first oxide semiconductor film 108 a.
Furthermore, when including nitrogen, the first oxide semiconductor film 108 a easily becomes n-type by generation of electrons serving as carriers and an increase of carrier density. Thus, a transistor including an oxide semiconductor film which contains nitrogen is likely to have normally-on characteristics. For this reason, nitrogen in the oxide semiconductor film is preferably reduced as much as possible; the concentration of nitrogen which is measured by SIMS is preferably set to be, for example, lower than or equal to 5×10 18 atoms/cm 3 .
Each of the first oxide semiconductor film 108 a and the second oxide semiconductor film 108 b may have a non-single-crystal structure, for example. The non-single crystal structure includes a c-axis aligned crystalline oxide semiconductor (CAAC-OS), a polycrystalline structure, a microcrystalline structure, or an amorphous structure, for example. Among the non-single crystal structure, the amorphous structure has the highest density of defect states, whereas CAAC-OS has the lowest density of defect states.
<<Insulating Film Functioning as Protective Insulating Film of Transistor>>
The insulating films 114 and 116 each have a function of supplying oxygen to the oxide semiconductor film 108 . The insulating film 118 has a function as a protective insulating film of the transistor 100 . The insulating films 114 and 116 include oxygen. Furthermore, the insulating film 114 is an insulating film which can transmit oxygen. The insulating film 114 also functions as a film which relieves damage to the oxide semiconductor film 108 at the time of forming the insulating film 116 in a later step.
A silicon oxide film, a silicon oxynitride film, or the like with a thickness greater than or equal to 5 nm and less than or equal to 150 nm, preferably greater than or equal to 5 nm and less than or equal to 50 nm can be used as the insulating film 114 .
In addition, it is preferable that the number of defects in the insulating film 114 be small and typically, the spin density corresponding to a signal that appears at g=2.001 due to a dangling bond of silicon be lower than or equal to 3×10 17 spins/cm 3 by electron spin resonance (ESR) measurement. This is because if the density of defects in the insulating film 114 is high, oxygen is bonded to the defects and the amount of oxygen that transmits the insulating film 114 is decreased.
Note that all oxygen entering the insulating film 114 from the outside does not move to the outside of the insulating film 114 and some oxygen remains in the insulating film 114 . Furthermore, movement of oxygen occurs in the insulating film 114 in some cases in such a manner that oxygen enters the insulating film 114 and oxygen included in the insulating film 114 moves to the outside of the insulating film 114 . When an oxide insulating film which can transmit oxygen is formed as the insulating film 114 , oxygen released from the insulating film 116 provided over the insulating film 114 can be moved to the oxide semiconductor film 108 through the insulating film 114 .
Note that the insulating film 114 can be formed using an oxide insulating film having a low density of states due to nitrogen oxide. Note that the density of states due to nitrogen oxide can be formed between the energy of the valence band maximum (E v _ os ) and the energy of the conduction band minimum (E c _ os ) of the oxide semiconductor film. A silicon oxynitride film that releases less nitrogen oxide, an aluminum oxynitride film that releases less nitrogen oxide, and the like can be used as the above oxide insulating film.
Note that a silicon oxynitride film that releases less nitrogen oxide is a film of which the amount of released ammonia is larger than the amount of released nitrogen oxide in thermal desorption spectroscopy (TDS) analysis; the amount of released ammonia is typically greater than or equal to 1×10 18 /cm 3 and less than or equal to 5×10 19 /cm 3 . Note that the amount of released ammonia is the amount of ammonia released by heat treatment with which the surface temperature of a film becomes higher than or equal to 50° C. and lower than or equal to 650° C., preferably higher than or equal to 50° C. and lower than or equal to 550° C.
Nitrogen oxide (NO x ; x is greater than 0 and less than or equal to 2, preferably greater than or equal to 1 and less than or equal to 2), typically NO 2 or NO, forms levels in the insulating film 114 , for example. The level is positioned in the energy gap of the oxide semiconductor film 108 . Therefore, when nitrogen oxide is diffused to the interface between the insulating film 114 and the oxide semiconductor film 108 , an electron is in some cases trapped by the level on the insulating film 114 side. As a result, the trapped electron remains in the vicinity of the interface between the insulating film 114 and the oxide semiconductor film 108 ; thus, the threshold voltage of the transistor is shifted in the positive direction.
Nitrogen oxide reacts with ammonia and oxygen in heat treatment. Since nitrogen oxide included in the insulating film 114 reacts with ammonia included in the insulating film 116 in heat treatment, nitrogen oxide included in the insulating film 114 is reduced. Therefore, an electron is hardly trapped at the vicinity of the interface between the insulating film 114 and the oxide semiconductor film 108 .
By using such an oxide insulating film, the insulating film 114 can reduce the shift in the threshold voltage of the transistor, which leads to a smaller change in the electrical characteristics of the transistor.
Note that in an ESR spectrum at 100 K or lower of the insulating film 114 , by heat treatment of a manufacturing process of the transistor, typically heat treatment at a temperature higher than or equal to 300° C. and lower than 350° C., a first signal that appears at a g-factor of greater than or equal to 2.037 and less than or equal to 2.039, a second signal that appears at a g-factor of greater than or equal to 2.001 and less than or equal to 2.003, and a third signal that appears at a g-factor of greater than or equal to 1.964 and less than or equal to 1.966 are observed. The split width of the first and second signals and the split width of the second and third signals that are obtained by ESR measurement using an X-band are each approximately 5 mT. The sum of the spin densities of the first signal that appears at a g-factor of greater than or equal to 2.037 and less than or equal to 2.039, the second signal that appears at a g-factor of greater than or equal to 2.001 and less than or equal to 2.003, and the third signal that appears at a g-factor of greater than or equal to 1.964 and less than or equal to 1.966 is lower than 1×10 18 spins/cm 3 , typically higher than or equal to 1×10 17 spins/cm 3 and lower than 1×10 18 spins/cm 3 .
In the ESR spectrum at 100 K or lower, the first signal that appears at a g-factor of greater than or equal to 2.037 and less than or equal to 2.039, the second signal that appears at a g-factor of greater than or equal to 2.001 and less than or equal to 2.003, and the third signal that appears at a g-factor of greater than or equal to 1.964 and less than or equal to 1.966 correspond to signals attributed to nitrogen oxide (NO x ; x is greater than 0 and less than or equal to 2, preferably greater than or equal to 1 and less than or equal to 2). Typical examples of nitrogen oxide include nitrogen monoxide and nitrogen dioxide. In other words, the lower the total spin density of the first signal that appears at a g-factor of greater than or equal to 2.037 and less than or equal to 2.039, the second signal that appears at a g-factor of greater than or equal to 2.001 and less than or equal to 2.003, and the third signal that appears at a g-factor of greater than or equal to 1.964 and less than or equal to 1.966 is, the lower the content of nitrogen oxide in the oxide insulating film is.
The concentration of nitrogen of the above oxide insulating film measured by SIMS is lower than or equal to 6×10 20 atoms/cm 3 .
The above oxide insulating film is formed by a PECVD method at a film surface temperature higher than or equal to 220° C. and lower than or equal to 350° C. using silane and dinitrogen monoxide, whereby a dense and hard film can be formed.
The insulating film 116 is formed using an oxide insulating film that contains oxygen in excess of that in the stoichiometric composition. Part of oxygen is released by heating from the oxide insulating film including oxygen in excess of that in the stoichiometric composition. The oxide insulating film including oxygen in excess of that in the stoichiometric composition is an oxide insulating film of which the amount of released oxygen converted into oxygen atoms is greater than or equal to 1.0×10 19 atoms/cm 3 , preferably greater than or equal to 3.0×10 20 atoms/cm 3 in TDS analysis. Note that the temperature of the film surface in the TDS analysis is preferably higher than or equal to 100° C. and lower than or equal to 700° C., or higher than or equal to 100° C. and lower than or equal to 500° C.
A silicon oxide film, a silicon oxynitride film, or the like with a thickness greater than or equal to 30 nm and less than or equal to 500 nm, preferably greater than or equal to 50 nm and less than or equal to 400 nm can be used as the insulating film 116 .
It is preferable that the number of defects in the insulating film 116 be small, and typically the spin density corresponding to a signal which appears at g=2.001 due to a dangling bond of silicon be lower than 1.5×10 18 spins/cm 3 , preferably lower than or equal to 1×10 18 spins/cm 3 by ESR measurement. Note that the insulating film 116 is provided more apart from the oxide semiconductor film 108 than the insulating film 114 is; thus, the insulating film 116 may have higher density of defects than the insulating film 114 .
Furthermore, the insulating films 114 and 116 can be formed using insulating films formed of the same kinds of materials; thus, a boundary between the insulating films 114 and 116 cannot be clearly observed in some cases. Thus, in this embodiment, the boundary between the insulating films 114 and 116 is shown by a dashed line. Although a two-layer structure of the insulating films 114 and 116 is described in this embodiment, the present invention is not limited to this. For example, a single-layer structure of the insulating film 114 may be employed.
The insulating film 118 includes nitrogen. Alternatively, the insulating film 118 includes nitrogen and silicon. The insulating film 118 has a function of blocking oxygen, hydrogen, water, alkali metal, alkaline earth metal, or the like. It is possible to prevent outward diffusion of oxygen from the oxide semiconductor film 108 , outward diffusion of oxygen included in the insulating films 114 and 116 , and entry of hydrogen, water, or the like into the oxide semiconductor film 108 from the outside by providing the insulating film 118 . A nitride insulating film, for example, can be used as the insulating film 118 . The nitride insulating film is formed using silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, or the like. Note that instead of the nitride insulating film having a blocking effect against oxygen, hydrogen, water, alkali metal, alkaline earth metal, and the like, an oxide insulating film having a blocking effect against oxygen, hydrogen, water, and the like may be provided. As the oxide insulating film having a blocking effect against oxygen, hydrogen, water, and the like, an aluminum oxide film, an aluminum oxynitride film, a gallium oxide film, a gallium oxynitride film, an yttrium oxide film, an yttrium oxynitride film, a hafnium oxide film, a hafnium oxynitride film, and the like can be given.
Although the variety of films such as the conductive films, the insulating films, and the oxide semiconductor films which are described above can be formed by a sputtering method or a PECVD method, such films may be formed by another method, e.g., a thermal chemical vapor deposition (CVD) method. Examples of the thermal CVD method include a metal organic chemical vapor deposition (MOCVD) method and an atomic layer deposition (ALD) method.
A thermal CVD method has an advantage that no defect due to plasma damage is generated since it does not utilize plasma for forming a film.
Deposition by a thermal CVD method may be performed in such a manner that a source gas and an oxidizer are supplied to the chamber at a time so that the pressure in a chamber is set to an atmospheric pressure or a reduced pressure, and react with each other in the vicinity of the substrate or over the substrate.
Deposition by an ALD method may be performed in such a manner that the pressure in a chamber is set to an atmospheric pressure or a reduced pressure, source gases for reaction are sequentially introduced into the chamber, and then the sequence of the gas introduction is repeated. For example, two or more kinds of source gases are sequentially supplied to the chamber by switching respective switching valves (also referred to as high-speed valves). For example, a first source gas is introduced, an inert gas (e.g., argon or nitrogen) or the like is introduced at the same time as or after the introduction of the first gas so that the source gases are not mixed, and then a second source gas is introduced. Note that in the case where the first source gas and the inert gas are introduced at a time, the inert gas serves as a carrier gas, and the inert gas may also be introduced at the same time as the introduction of the second source gas. Alternatively, the first source gas may be exhausted by vacuum evacuation instead of the introduction of the inert gas, and then the second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer; then the second source gas is introduced to react with the first layer; as a result, a second layer is stacked over the first layer, so that a thin film is formed. The sequence of the gas introduction is repeated plural times until a desired thickness is obtained, whereby a thin film with excellent step coverage can be formed. The thickness of the thin film can be adjusted by the number of repetition times of the sequence of the gas introduction; therefore, an ALD method makes it possible to accurately adjust a thickness and thus is suitable for manufacturing a minute FET.
The variety of films such as the conductive films, the insulating films, the oxide semiconductor films, and the metal oxide films in this embodiment can be formed by a thermal CVD method such as an MOCVD method or an ALD method. For example, in the case where an In—Ga—Zn—O film is formed, trimethylindium, trimethylgallium, and dimethylzinc are used. Note that the chemical formula of trimethylindium is In(CH 3 ) 3 . The chemical formula of trimethylgallium is Ga(CH 3 ) 3 . The chemical formula of dimethylzinc is Zn(CH 3 ) 2 . Without limitation to the above combination, triethylgallium (chemical formula: Ga(C 2 H 5 ) 3 ) can be used instead of trimethylgallium and diethylzinc (chemical formula: Zn(C 2 H 5 ) 2 ) can be used instead of dimethylzinc.
For example, in the case where a hafnium oxide film is formed by a deposition apparatus using an ALD method, two kinds of gases, that is, ozone (O 3 ) as an oxidizer and a source gas which is obtained by vaporizing liquid containing a solvent and a hafnium precursor compound (e.g., a hafnium alkoxide or a hafnium amide such as tetrakis(dimethylamide)hafnium (TDMAH)) are used. Note that the chemical formula of tetrakis(dimethylamide)hafnium is Hf[N(CH 3 ) 2 ] 4 . Examples of another material liquid include tetrakis(ethylmethylamide)hafnium.
For example, in the case where an aluminum oxide film is formed by a deposition apparatus using an ALD method, two kinds of gases, e.g., H 2 O as an oxidizer and a source gas which is obtained by vaporizing liquid containing a solvent and an aluminum precursor compound (e.g., trimethylaluminum (TMA)) are used. Note that the chemical formula of trimethylaluminum is Al(CH 3 ) 3 . Examples of another material liquid include tris(dimethylamide)aluminum, triisobutylaluminum, and aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate).
For example, in the case where a silicon oxide film is formed by a deposition apparatus using an ALD method, hexachlorodisilane is adsorbed on a surface where a film is to be formed, chlorine included in the adsorbate is removed, and radicals of an oxidizing gas (e.g., O 2 or dinitrogen monoxide) are supplied to react with the adsorbate.
For example, in the case where a tungsten film is formed using a deposition apparatus using an ALD method, a WF 6 gas and a B 2 H 6 gas are sequentially introduced plural times to form an initial tungsten film, and then a WF 6 gas and an H 2 gas are used, so that a tungsten film is formed. Note that an SiH 4 gas may be used instead of a B 2 H 6 gas.
For example, in the case where an oxide semiconductor film, e.g., an In—Ga—Zn—O film is formed using a deposition apparatus using an ALD method, an In(CH 3 ) 3 gas and an O 3 gas are sequentially introduced plural times to form an InO layer, a GaO layer is formed using a Ga(CH 3 ) 3 gas and an O 3 gas, and then a ZnO layer is formed using a Zn(CH 3 ) 2 gas and an O 3 gas. Note that the order of these layers is not limited to this example. A mixed compound layer such as an In—Ga—O layer, an In—Zn—O layer, or a Ga—Zn—O layer may be formed by mixing these gases. Note that although an H 2 O gas which is obtained by bubbling water with an inert gas such as Ar may be used instead of an O 3 gas, it is preferable to use an O 3 gas, which does not contain H. Furthermore, instead of an In(CH 3 ) 3 gas, an In(C 2 H 5 ) 3 gas may be used. Instead of a Ga(CH 3 ) 3 gas, a Ga(C 2 H 5 ) 3 gas may be used. Furthermore, a Zn(CH 3 ) 2 gas may be used.
Note that this embodiment can be combined with any of the other embodiments in this specification as appropriate.
Embodiment 5
In this embodiment, the structure of a transistor that can be used in the display panel of one embodiment of the present invention will be described with reference to FIGS. 11A to 11C .
<Structure Example of Semiconductor Device>
FIG. 11A is a top view of the transistor 100 . FIG. 11B is a cross-sectional view taken along the section line X 1 -X 2 in FIG. 11A . FIG. 11C is a cross-sectional view taken along the section line Y 1 -Y 2 in FIG. 11A . Note that in FIG. 11A , some components of the transistor 100 (e.g., an insulating film serving as a gate insulating film) are not illustrated to avoid complexity. Furthermore, the direction of the section line X 1 -X 2 may be called a channel length direction, and the direction of the section line Y 1 -Y 2 may be called a channel width direction. As in FIG. 11A , some components are not illustrated in some cases in top views of transistors described below.
The transistor 100 can be used for the display panel 700 described in Embodiment 3.
For example, when the transistor 100 is used as the transistor M or the transistor MD, the substrate 102 , the conductive film 104 , a stacked film of the insulating film 106 and the insulating film 107 , the oxide semiconductor film 108 , the conductive film 112 a , the conductive film 112 b , a stacked film of the insulating film 114 and the insulating film 116 , the insulating film 118 , and a conductive film 120 b can be referred to as the insulating film 501 C, the conductive film 504 , the insulating film 506 , the semiconductor film 508 , the conductive film 512 A, the conductive film 512 B, the insulating film 516 , the insulating film 518 , and the conductive film 524 , respectively.
The transistor 100 includes the conductive film 104 functioning as a first gate electrode over the substrate 102 , the insulating film 106 over the substrate 102 and the conductive film 104 , the insulating film 107 over the insulating film 106 , the oxide semiconductor film 108 over the insulating film 107 , and the conductive films 112 a and 112 b functioning as source and drain electrodes electrically connected to the oxide semiconductor film 108 , the insulating films 114 and 116 over the oxide semiconductor film 108 and the conductive films 112 a and 112 b , a conductive film 120 a that is over the insulating film 116 and electrically connected to the conductive film 112 b , the conductive film 120 b over the insulating film 116 , and the insulating film 118 over the insulating film 116 and the conductive films 120 a and 120 b.
The insulating films 106 and 107 function as a first gate insulating film of the transistor 100 . The insulating films 114 and 116 function as a second gate insulating film of the transistor 100 . The insulating film 118 functions as a protective insulating film of the transistor 100 .
The conductive film 120 b can be used as a second gate electrode of the transistor 100 .
In the case where the transistor 100 is used in a pixel portion of the display panel, the conductive film 120 a can be used as an electrode of a display element, or the like.
The oxide semiconductor film 108 includes the oxide semiconductor film 108 b (on the conductive film 104 side) that functions as a first gate electrode, and an oxide semiconductor film 108 c over the oxide semiconductor film 108 b . The oxide semiconductor films 108 b and 108 c contain In, M (M is Al, Ga, Y, or Sn), and Zn.
The oxide semiconductor film 108 b preferably includes a region in which the atomic proportion of In is larger than the atomic proportion of M, for example. The oxide semiconductor film 108 c preferably includes a region in which the atomic proportion of In is smaller than that in the oxide semiconductor film 108 b.
The oxide semiconductor film 108 b including the region in which the atomic proportion of In is larger than that of M can increase the field-effect mobility (also simply referred to as mobility or μFE) of the transistor 100 . Specifically, the field-effect mobility of the transistor 100 can exceed 10 cm 2 /Vs, preferably exceed 30 cm 2 /Vs.
For example, the use of the transistor with high field-effect mobility for a gate driver that generates a gate signal (specifically, a demultiplexer connected to an output terminal of a shift register included in a gate driver) allows a semiconductor device or a display device to have a narrow frame.
On the other hand, the oxide semiconductor film 108 b including the region in which the atomic proportion of In is larger than that of M makes it easier to change electrical characteristics of the transistor 100 in light irradiation. However, in the semiconductor device of one embodiment of the present invention, the oxide semiconductor film 108 c is formed over the oxide semiconductor film 108 b . Furthermore, the oxide semiconductor film 108 c including the region in which the atomic proportion of In is smaller than that in the oxide semiconductor film 108 b has larger Eg than the oxide semiconductor film 108 b . For this reason, the oxide semiconductor film 108 which is a layered structure of the oxide semiconductor film 108 b and the oxide semiconductor film 108 c has high resistance to a negative bias stress test with light irradiation.
Impurities such as hydrogen or moisture entering the channel region of the oxide semiconductor film 108 , particularly the oxide semiconductor film 108 b adversely affect the transistor characteristics and therefore cause a problem. Moreover, it is preferable that the amount of impurities such as hydrogen or moisture in the channel region of the oxide semiconductor film 108 b be as small as possible. Furthermore, oxygen vacancies formed in the channel region in the oxide semiconductor film 108 b adversely affect the transistor characteristics and therefore cause a problem. For example, oxygen vacancies formed in the channel region in the oxide semiconductor film 108 b are bonded to hydrogen to serve as a carrier supply source. The carrier supply source generated in the channel region in the oxide semiconductor film 108 b causes a change in the electrical characteristics, typically, shift in the threshold voltage, of the transistor 100 including the oxide semiconductor film 108 b . Therefore, it is preferable that the amount of oxygen vacancies in the channel region of the oxide semiconductor film 108 b be as small as possible.
In view of this, one embodiment of the present invention is a structure in which insulating films in contact with the oxide semiconductor film 108 , specifically the insulating film 107 formed under the oxide semiconductor film 108 and the insulating films 114 and 116 formed over the oxide semiconductor film 108 include excess oxygen. Oxygen or excess oxygen is transferred from the insulating film 107 and the insulating films 114 and 116 to the oxide semiconductor film 108 , whereby the oxygen vacancies in the oxide semiconductor film can be reduced. As a result, a change in electrical characteristics of the transistor 100 , particularly a change in the transistor 100 due to light irradiation, can be reduced.
In one embodiment of the present invention, a manufacturing method is used in which the number of manufacturing steps is not increased or an increase in the number of manufacturing steps is extremely small, because the insulating film 107 and the insulating films 114 and 116 are made to contain excess oxygen. Thus, the transistors 100 can be manufactured with high yield.
Specifically, in a step of forming the oxide semiconductor film 108 b , the oxide semiconductor film 108 b is formed by a sputtering method in an atmosphere containing an oxygen gas, whereby oxygen or excess oxygen is added to the insulating film 107 over which the oxide semiconductor film 108 b is formed.
Furthermore, in a step of forming the conductive films 120 a and 120 b , the conductive films 120 a and 120 b are formed by a sputtering method in an atmosphere containing an oxygen gas, whereby oxygen or excess oxygen is added to the insulating film 116 over which the conductive films 120 a and 120 b are formed. Note that in some cases, oxygen or excess oxygen is added also to the insulating film 114 and the oxide semiconductor film 108 under the insulating film 116 when oxygen or excess oxygen is added to the insulating film 116 .
<Oxide Conductor>
Next, an oxide conductor is described. In a step of forming the conductive films 120 a and 120 b , the conductive films 120 a and 120 b serve as a protective film for suppressing release of oxygen from the insulating films 114 and 116 . The conductive films 120 a and 120 b serve as semiconductors before a step of forming the insulating film 118 and serve as conductors after the step of forming the insulating film 118 .
To allow the conductive films 120 a and 120 b to serve as conductors, an oxygen vacancy is formed in the conductive films 120 a and 120 b and hydrogen is added from the insulating film 118 to the oxygen vacancy, whereby a donor level is formed in the vicinity of the conduction band. As a result, the conductivity of each of the conductive films 120 a and 120 b is increased, so that the conductive films 120 a and 120 b become conductors. The conductive films 120 a and 120 b having become conductors can each be referred to as an oxide conductor. Oxide semiconductors generally have a visible light transmitting property because of their large energy gap. An oxide conductor is an oxide semiconductor having a donor level in the vicinity of the conduction band. Therefore, the influence of absorption due to the donor level is small in an oxide conductor, and an oxide conductor has a visible light transmitting property comparable to that of an oxide semiconductor.
<Components of Semiconductor Device>
Components of the semiconductor device of this embodiment will be described below in detail.
As materials described below, materials described in Embodiment 4 can be used.
The material that can be used for the substrate 102 described in Embodiment 4 can be used for the substrate 102 in this embodiment. Furthermore, the materials that can be used for the insulating films 106 and 107 described in Embodiment 4 can be used for the insulating films 106 and 107 in this embodiment.
In addition, the materials that can be used for the conductive films functioning as the gate electrode, the source electrode, and the drain electrode described in Embodiment 4 can be used for the conductive films functioning as the first gate electrode, the source electrode, and the drain electrode in this embodiment.
<<Oxide Semiconductor Film>>
The oxide semiconductor film 108 can be formed using the materials described above.
In the case where the oxide semiconductor film 108 b includes In-M-Zn oxide, it is preferable that the atomic ratio of metal elements of a sputtering target used for forming the In-M-Zn oxide satisfy In≦M. The atomic ratio between metal elements in such a sputtering target is, for example, In:M:Zn=2:1:3, In:M:Zn=3:1:2, or In:M:Zn=4:2:4.1.
In the case where the oxide semiconductor film 108 c is In-M-Zn oxide, it is preferable that the atomic ratio of metal elements of a sputtering target used for forming a film of the In-M-Zn oxide satisfy In≦M. The atomic ratio of metal elements in such a sputtering target is, for example, In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=1:3:2, In:M:Zn=1:3:4, In:M:Zn=1:3:6, or In:M:Zn=1:4:5.
In the case where the oxide semiconductor films 108 b and 108 c are formed of In-M-Zn oxide, it is preferable to use a target including polycrystalline In-M-Zn oxide as the sputtering target. The use of the target including polycrystalline In-M-Zn oxide facilitates formation of the oxide semiconductor films 108 b and 108 c having crystallinity. Note that the atomic ratios of metal elements in each of the formed oxide semiconductor films 108 b and 108 c vary from the above atomic ratio of metal elements of the sputtering target within a range of ±40% as an error. For example, when a sputtering target of the oxide semiconductor film 108 b with an atomic ratio of In to Ga and Zn of 4:2:4.1 is used, the atomic ratio of In to Ga and Zn in the oxide semiconductor film 108 b may be 4:2:3 or in the vicinity of 4:2:3.
The energy gap of the oxide semiconductor film 108 is 2 eV or more, preferably 2.5 eV or more, further preferably 3 eV or more. The use of an oxide semiconductor having a wide energy gap can reduce off-state current of the transistor 100 . In particular, an oxide semiconductor film having an energy gap more than or equal to 2 eV, preferably more than or equal to 2 eV and less than or equal to 3.0 eV is preferably used as the oxide semiconductor film 108 b , and an oxide semiconductor film having an energy gap more than or equal to 2.5 eV and less than or equal to 3.5 eV is preferably used as the oxide semiconductor film 108 c . Furthermore, the oxide semiconductor film 108 c preferably has a higher energy gap than the oxide semiconductor film 108 b.
Each thickness of the oxide semiconductor film 108 b and the oxide semiconductor film 108 c is more than or equal to 3 nm and less than or equal to 200 nm, preferably more than or equal to 3 nm and less than or equal to 100 nm, more preferably more than or equal to 3 nm and less than or equal to 50 nm.
An oxide semiconductor film with low carrier density is used as the oxide semiconductor film 108 c . For example, the carrier density of the oxide semiconductor film 108 c is lower than or equal to 1×10 17 /cm 3 , preferably lower than or equal to 1×10 15 /cm 3 , further preferably lower than or equal to 1×10 13 /cm 3 , still further preferably lower than or equal to 1×10 11 /cm 3 .
Note that, without limitation to the compositions and materials described above, a material with an appropriate composition may be used depending on required semiconductor characteristics and electrical characteristics (e.g., field-effect mobility and threshold voltage) of a transistor. Furthermore, in order to obtain required semiconductor characteristics of a transistor, it is preferable that the carrier density, the impurity concentration, the defect density, the atomic ratio of a metal element to oxygen, the interatomic distance, the density, and the like of the oxide semiconductor film 108 b and the oxide semiconductor film 108 c be set to be appropriate.
Note that it is preferable to use, as the oxide semiconductor film 108 b and the oxide semiconductor film 108 c , an oxide semiconductor film in which the impurity concentration is low and the density of defect states is low, in which case the transistor can have more excellent electrical characteristics. Here, the state in which the impurity concentration is low and the density of defect states is low (the amount of oxygen vacancy is small) is referred to as “highly purified intrinsic” or “substantially highly purified intrinsic”. A highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has few carrier generation sources, and thus can have a low carrier density. Thus, a transistor in which a channel region is formed in the oxide semiconductor film rarely has a negative threshold voltage (is rarely normally on). A highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states and accordingly has a low density of trap states in some cases. Furthermore, the highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has an extremely low off-state current; even when an element has a channel width of 1×10 6 μm and a channel length L of 10 μm, the off-state current can be less than or equal to the measurement limit of a semiconductor parameter analyzer, that is, less than or equal to 1×10 −13 A, at a voltage (drain voltage) between a source electrode and a drain electrode of from 1 V to 10 V.
Accordingly, the transistor in which the channel region is formed in the highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film can have a small change in electrical characteristics and high reliability. Charges trapped by the trap states in the oxide semiconductor film take a long time to be released and may behave like fixed charges. Thus, the transistor whose channel region is formed in the oxide semiconductor film having a high density of trap states has unstable electrical characteristics in some cases. As examples of the impurities, hydrogen, nitrogen, alkali metal, and alkaline earth metal are given.
Hydrogen included in the oxide semiconductor film reacts with oxygen bonded to a metal atom to be water, and also causes oxygen vacancy in a lattice from which oxygen is released (or a portion from which oxygen is released). Due to entry of hydrogen into the oxygen vacancy, an electron serving as a carrier is generated in some cases. Furthermore, in some cases, bonding of part of hydrogen to oxygen bonded to a metal atom causes generation of an electron serving as a carrier. Thus, a transistor including an oxide semiconductor film which contains hydrogen is likely to be normally on. Accordingly, it is preferable that hydrogen be reduced as much as possible in the oxide semiconductor film 108 . Specifically, in the oxide semiconductor film 108 , the concentration of hydrogen which is measured by SIMS is lower than or equal to 2×10 20 atoms/cm 3 , preferably lower than or equal to 5×10 19 atoms/cm 3 , further preferably lower than or equal to 1×10 19 atoms/cm 3 , further preferably lower than or equal to 5×10 18 atoms/cm 3 , further preferably lower than or equal to 1×10 18 atoms/cm 3 , further preferably lower than or equal to 5×10 17 atoms/cm 3 , and further preferably lower than or equal to 1×10 16 atoms/cm 3 .
The oxide semiconductor film 108 b preferably includes a region in which hydrogen concentration is smaller than that in the oxide semiconductor film 108 c . A semiconductor device including the oxide semiconductor film 108 b having the region in which hydrogen concentration is smaller than that in the oxide semiconductor film 108 c can be increased in reliability.
When silicon or carbon that is one of elements belonging to Group 14 is included in the oxide semiconductor film 108 b , oxygen vacancy is increased in the oxide semiconductor film 108 b , and the oxide semiconductor film 108 b becomes an n-type film. Thus, the concentration of silicon or carbon (the concentration is measured by SIMS) in the oxide semiconductor film 108 b or the concentration of silicon or carbon (the concentration is measured by SIMS) in the vicinity of an interface with the oxide semiconductor film 108 b is set to be lower than or equal to 2×10 18 atoms/cm 3 , preferably lower than or equal to 2×10 17 atoms/cm 3 .
In addition, the concentration of alkali metal or alkaline earth metal of the oxide semiconductor film 108 b , which is measured by SIMS, is lower than or equal to 1×10 18 atoms/cm 3 , preferably lower than or equal to 2×10 16 atoms/cm 3 . Alkali metal and alkaline earth metal might generate carriers when bonded to an oxide semiconductor, in which case the off-state current of the transistor might be increased. Therefore, it is preferable to reduce the concentration of alkali metal or alkaline earth metal of the oxide semiconductor film 108 b.
Furthermore, when including nitrogen, the oxide semiconductor film 108 b easily becomes n-type by generation of electrons serving as carriers and an increase of carrier density. Thus, a transistor including an oxide semiconductor film which contains nitrogen is likely to have normally-on characteristics. For this reason, nitrogen in the oxide semiconductor film is preferably reduced as much as possible; the concentration of nitrogen which is measured by SIMS is preferably set to be, for example, lower than or equal to 5×10 18 atoms/cm 3 .
The oxide semiconductor film 108 b and the oxide semiconductor film 108 c may have a non-single-crystal structure, for example. The non-single crystal structure includes CAAC-OS, a polycrystalline structure, a microcrystalline structure, or an amorphous structure, for example. Among the non-single crystal structure, the amorphous structure has the highest density of defect states, whereas CAAC-OS has the lowest density of defect states.
<<Insulating Films Functioning as Second Gate Insulating Film>>
The insulating films 114 and 116 function as a second gate insulating film of the transistor 100 . In addition, the insulating films 114 and 116 each have a function of supplying oxygen to the oxide semiconductor film 108 . That is, the insulating films 114 and 116 contain oxygen. Furthermore, the insulating film 114 is an insulating film which can transmit oxygen. Note that the insulating film 114 also functions as a film which relieves damage to the oxide semiconductor film 108 at the time of forming the insulating film 116 in a later step.
For example, the insulating films 114 and 116 described in Embodiment 4 can be used as the insulating films 114 and 116 in this embodiment.
<<Oxide Semiconductor Film Functioning as Conductive Film and Oxide Semiconductor Film Functioning as Second Gate Electrode>>
The material of the oxide semiconductor film 108 described above can be used for the conductive film 120 a and the conductive film 120 b functioning as the second gate electrode.
That is, the conductive film 120 a functioning as a conductive film and the conductive film 120 b functioning as a second gate electrode contain a metal element which is the same as that contained in the oxide semiconductor film 108 (the oxide semiconductor film 108 b and the oxide semiconductor film 108 c ). For example, the conductive film 120 b functioning as a second gate electrode and the oxide semiconductor film 108 (the oxide semiconductor film 108 b and the oxide semiconductor film 108 c ) contain the same metal element; thus, the manufacturing cost can be reduced.
For example, in the case where the conductive film 120 a functioning as a conductive film and the conductive film 120 b functioning as a second gate electrode are each In-M-Zn oxide, the atomic ratio of metal elements in a sputtering target used for forming the In-M-Zn oxide preferably satisfies In≧M. The atomic ratio of metal elements in such a sputtering target is In:M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:4.1, or the like.
The conductive film 120 a functioning as a conductive film and the conductive film 120 b functioning as a second gate electrode can each have a single-layer structure or a stacked-layer structure of two or more layers. Note that in the case where the conductive film 120 a and the conductive film 120 b each have a stacked-layer structure, the composition of the sputtering target is not limited to that described above.
<<Insulating Film Functioning as Protective Insulating Film of Transistor>>
The insulating film 118 serves as a protective insulating film of the transistor 100 .
The insulating film 118 includes one or both of hydrogen and nitrogen. Alternatively, the insulating film 118 includes nitrogen and silicon. The insulating film 118 has a function of blocking oxygen, hydrogen, water, alkali metal, alkaline earth metal, or the like. It is possible to prevent outward diffusion of oxygen from the oxide semiconductor film 108 , outward diffusion of oxygen included in the insulating films 114 and 116 , and entry of hydrogen, water, or the like into the oxide semiconductor film 108 from the outside by providing the insulating film 118 .
The insulating film 118 has a function of supplying one or both of hydrogen and nitrogen to the conductive film 120 a functioning as a conductive film and the conductive film 120 b functioning as a second gate electrode. The insulating film 118 preferably includes hydrogen and has a function of supplying the hydrogen to the conductive films 120 a and 120 b . The conductive films 120 a and 120 b supplied with hydrogen from the insulating film 118 function as conductors.
A nitride insulating film, for example, can be used as the insulating film 118 . The nitride insulating film is formed using silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, or the like.
Although the variety of films such as the conductive films, the insulating films, and the oxide semiconductor films which are described above can be formed by a sputtering method or a PECVD method, such films may be formed by another method, e.g., a thermal CVD method. Examples of the thermal CVD method include an MOCVD method and an ALD method. Specifically, the methods described in Embodiment 4 can be used.
This embodiment can be combined with any of the other embodiments in this specification as appropriate.
Embodiment 6
Composition of Cac-Os
Described below is the composition of a cloud aligned complementary oxide semiconductor (CAC-OS) applicable to a transistor of the display panel or the like of one embodiment of the present invention.
In this specification and the like, a metal oxide means an oxide of metal in a broad sense. Metal oxides are classified into an oxide insulator, an oxide conductor (including a transparent oxide conductor), an oxide semiconductor (also simply referred to as an OS), and the like. For example, a metal oxide used in an active layer of a transistor is called an oxide semiconductor in some cases. In other words, an OS FET is a transistor including a metal oxide or an oxide semiconductor.
In this specification, a metal oxide in which regions functioning as a conductor and regions functioning as a dielectric are mixed and which functions as a semiconductor as a whole is defined as a cloud aligned complementary oxide semiconductor (CAC-OS) or a CAC-metal oxide.
The CAC-OS has, for example, a composition in which elements included in an oxide semiconductor are unevenly distributed. The material including unevenly distributed elements has a size of greater than or equal to 0.5 nm and less than or equal to 10 nm, preferably greater than or equal to 0.5 nm and less than or equal to 3 nm, or a similar size. Note that in the following description of an oxide semiconductor, a state in which one or more elements are unevenly distributed and regions including the element(s) are mixed is referred to as a mosaic pattern or a patch-like pattern. The region has a size of greater than or equal to 0.5 nm and less than or equal to 10 nm, preferably greater than or equal to 0.5 nm and less than or equal to 3 nm, or a similar size.
The physical properties of a region where atoms of a particular element are unevenly distributed are determined by the properties of the element. For example, a region where atoms of an element which relatively tends to serve as an insulator among elements included in a metal oxide are unevenly distributed serves as a dielectric region. In contrast, a region where atoms of an element which relatively tends to serve as a conductor among elements included in a metal oxide are unevenly distributed serves as a conductive region. A material in which conductive regions and dielectric regions are mixed to form a mosaic pattern serves as a semiconductor.
That is, a metal oxide in one embodiment of the present invention is a kind of matrix composite or metal matrix composite, in which materials having different physical properties are mixed.
Note that an oxide semiconductor preferably contains at least indium. In particular, indium and zinc are preferably contained. In addition, an element M (M is one or more of gallium, aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and the like) may be contained.
For example, of the CAC-OS, an In—Ga—Zn oxide with the CAC composition (such an In—Ga—Zn oxide may be particularly referred to as CAC-IGZO) has a composition in which materials are separated into indium oxide (InO X1 , where X1 is a real number greater than 0) or indium zinc oxide (In X2 Zn Y2 O Z2 , where X2, Y2, and Z2 are real numbers greater than 0), and gallium oxide (GaO X3 , where X3 is a real number greater than 0), gallium zinc oxide (Ga X4 Zn Y4 O Z4 , where X4, Y4, and Z4 are real numbers greater than 0), or the like, and a mosaic pattern is formed. Then, InO X1 and In X2 Zn Y2 O Z2 forming the mosaic pattern are evenly distributed in the film. This composition is also referred to as a cloud-like composition.
That is, the CAC-OS is a composite oxide semiconductor with a composition in which a region including GaO X3 as a main component and a region including In X2 Zn Y2 O Z2 or InO X1 as a main component are mixed. Note that in this specification, for example, when the atomic ratio of In to an element M in a first region is greater than the atomic ratio of In to an element M in a second region, the first region has higher In concentration than the second region.
Note that a compound including In, Ga, Zn, and O is also known as IGZO. Typical examples of IGZO include a crystalline compound represented by InGaO 3 (ZnO) m1 (m1 is a natural number) and a crystalline compound represented by In (1+x0) Ga (1−x0) O 3 (ZnO) m0 (−1≦x0≦1; m0 is a given number).
The above crystalline compounds have a single crystal structure, a polycrystalline structure, or a CAAC structure. Note that the CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis alignment and are connected in the a-b plane direction without alignment.
On the other hand, the CAC-OS relates to the material composition of an oxide semiconductor. In a material composition of a CAC-OS including In, Ga, Zn, and O, nanoparticle regions including Ga as a main component are partly observed and nanoparticle regions including In as a main component are partly observed. These nanoparticle regions are randomly dispersed to form a mosaic pattern. Therefore, the crystal structure is a secondary element for the CAC-OS.
Note that in the CAC-OS, a stacked-layer structure including two or more films with different atomic ratios is not included. For example, a two-layer structure of a film including In as a main component and a film including Ga as a main component is not included.
A boundary between the region including GaO X3 as a main component and the region including In X2 Zn Y2 O Z2 or InO X1 as a main component is not clearly observed in some cases.
In the case where one or more of aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and the like are contained instead of gallium, nanoparticle regions including the selected element(s) as a main component(s) are partly observed and nanoparticle regions including In as a main component are partly observed, and these nanoparticle regions are randomly dispersed to form a mosaic pattern in a CAC-OS.
<Analysis of CAC-OS>
Next, measurement results of an oxide semiconductor over a substrate by a variety of methods are described.
<<Structure of Samples and Formation Method Thereof>>
Nine samples of one embodiment of the present invention are described below. The samples are formed at different substrate temperatures and with different ratios of an oxygen gas flow rate in formation of the oxide semiconductor. Note that each sample includes a substrate and an oxide semiconductor over the substrate.
A method for forming the samples is described.
A glass substrate is used as the substrate. Over the glass substrate, a 100-nm-thick In—Ga—Zn oxide is formed as an oxide semiconductor with a sputtering apparatus. The formation conditions are as follows: the pressure in a chamber is 0.6 Pa, and an oxide target (with an atomic ratio of In:Ga:Zn=4:2:4.1) is used as a target. The oxide target provided in the sputtering apparatus is supplied with an AC power of 2500 W.
As for the conditions in the formation of the oxide of the nine samples, the substrate temperature is set to a temperature that is not increased by intentional heating (hereinafter such a temperature is also referred to as R.T.), to 130° C., and to 170° C. The ratio of a flow rate of an oxygen gas to a flow rate of a mixed gas of Ar and oxygen (also referred to as an oxygen gas flow rate ratio) is set to 10%, 30%, and 100%.
<<Analysis by X-Ray Diffraction>>
In this section, results of X-ray diffraction (XRD) measurement performed on the nine samples are described. As an XRD apparatus, D8 ADVANCE manufactured by Bruker AXS is used. The conditions are as follows: scanning is performed by an out-of-plane method at θ/2θ, the scanning range is 15 deg. to 50 deg., the step width is 0.02 deg., and the scanning speed is 3.0 deg./min.
FIG. 19 shows XRD spectra measured by an out-of-plane method. In FIG. 19 , the top row shows the measurement results of the samples formed at a substrate temperature of 170° C.; the middle row shows the measurement results of the samples formed at a substrate temperature of 130° C.; the bottom row shows the measurement results of the samples formed at a substrate temperature of R.T. The left column shows the measurement results of the samples formed with an oxygen gas flow rate ratio of 10%; the middle column shows the measurement results of the samples formed with an oxygen gas flow rate ratio of 30%; the right column shows the measurement results of the samples formed with an oxygen gas flow rate ratio of 100%.
In the XRD spectra shown in FIG. 19 , the higher the substrate temperature at the time of formation is or the higher the oxygen gas flow rate ratio at the time of formation is, the higher the intensity of the peak at around 2θ=31° is. Note that it is found that the peak at around 2θ=31° is derived from a crystalline IGZO compound whose c-axes are aligned in a direction substantially perpendicular to a formation surface or a top surface of the crystalline IGZO compound (such a compound is also referred to as c-axis aligned crystalline (CAAC) IGZO).
As shown in the XRD spectra in FIG. 19 , as the substrate temperature at the time of formation is lower or the oxygen gas flow rate ratio at the time of formation is lower, a peak becomes less clear. Accordingly, it is found that there are no alignment in the a-b plane direction and c-axis alignment in the measured areas of the samples that are formed at a lower substrate temperature or with a lower oxygen gas flow rate ratio.
<<Analysis with Electron Microscope>>
This section describes the observation and analysis results of the samples formed at a substrate temperature of R.T. and with an oxygen gas flow rate ratio of 10% with a high-angle annular dark-field scanning transmission electron microscope (HAADF-STEM). An image obtained with an HAADF-STEM is also referred to as a TEM image.
Described are the results of image analysis of plan-view images and cross-sectional images obtained with an HAADF-STEM (also referred to as plan-view TEM images and cross-sectional TEM images, respectively). The TEM images are observed with a spherical aberration corrector function. The HAADF-STEM images are obtained using an atomic resolution analytical electron microscope JEM-ARM200F manufactured by JEOL Ltd. under the following conditions: the acceleration voltage is 200 kV, and irradiation with an electron beam with a diameter of approximately 0.1 nm is performed.
FIG. 20A is a plan-view TEM image of the sample formed at a substrate temperature of R.T. and with an oxygen gas flow rate ratio of 10%. FIG. 20B is a cross-sectional TEM image of the sample formed at a substrate temperature of R.T. and with an oxygen gas flow rate ratio of 10%.
<<Analysis of Electron Diffraction Patterns>>
This section describes electron diffraction patterns obtained by irradiation of the sample formed at a substrate temperature of R.T. and an oxygen gas flow rate ratio of 10% with an electron beam with a probe diameter of 1 nm (also referred to as a nanobeam).
Electron diffraction patterns of points indicated by black dots a 1 , a 2 , a 3 , a 4 , and a 5 in the plan-view TEM image in FIG. 20A of the sample formed at a substrate temperature of R.T. and an oxygen gas flow rate ratio of 10% are observed. Note that the electron diffraction patterns are observed while electron beam irradiation is performed at a constant rate for 35 seconds. FIGS. 20C, 20D, 20E, 20F, and 20G show the results of the points indicated by the black dots a 1 , a 2 , a 3 , a 4 , and a 5 , respectively.
In FIGS. 20C, 20D, 20E, 20F, and 20G , regions with high luminance in a circular (ring) pattern can be shown. Furthermore, a plurality of spots can be shown in a ring-like shape.
Electron diffraction patterns of points indicated by black dots b 1 , b 2 , b 3 , b 4 , and b 5 in the cross-sectional TEM image in FIG. 20B of the sample formed at a substrate temperature of R.T. and an oxygen gas flow rate ratio of 10% are observed. FIGS. 20H, 20I, 20J, 20K, and 20L show the results of the points indicated by the black dots b 1 , b 2 , b 3 , b 4 , and b 5 , respectively.
In FIGS. 20H, 20I, 20J, 20K, and 20L , regions with high luminance in a ring pattern can be shown. Furthermore, a plurality of spots can be shown in a ring-like shape.
For example, when an electron beam with a probe diameter of 300 nm is incident on a CAAC-OS including an InGaZnO 4 crystal in a direction parallel to the sample surface, a diffraction pattern including a spot derived from the ( 009 ) plane of the InGaZnO 4 crystal is obtained. That is, the CAAC-OS has c-axis alignment and the c-axes are aligned in the direction substantially perpendicular to the formation surface or the top surface of the CAAC-OS. Meanwhile, a ring-like diffraction pattern is shown when an electron beam with a probe diameter of 300 nm is incident on the same sample in a direction perpendicular to the sample surface. That is, it is found that the CAAC-OS has neither a-axis alignment nor b-axis alignment.
Furthermore, a diffraction pattern like a halo pattern is observed when an oxide semiconductor including a nanocrystal (a nanocrystalline oxide semiconductor (nc-OS)) is subjected to electron diffraction using an electron beam with a large probe diameter (e.g., 50 nm or larger). Meanwhile, bright spots are shown in a nanobeam electron diffraction pattern of the nc-OS obtained using an electron beam with a small probe diameter (e.g., smaller than 50 nm). Furthermore, in a nanobeam electron diffraction pattern of the nc-OS, regions with high luminance in a circular (ring) pattern are shown in some cases. Also in a nanobeam electron diffraction pattern of the nc-OS, a plurality of bright spots are shown in a ring-like shape in some cases.
The electron diffraction pattern of the sample formed at a substrate temperature of R.T. and with an oxygen gas flow rate ratio of 10% has regions with high luminance in a ring pattern and a plurality of bright spots appear in the ring-like pattern. Accordingly, the sample formed at a substrate temperature of R.T. and with an oxygen gas flow rate ratio of 10% exhibits an electron diffraction pattern similar to that of the nc-OS and does not show alignment in the plane direction and the cross-sectional direction.
According to what is described above, an oxide semiconductor formed at a low substrate temperature or with a low oxygen gas flow rate ratio is likely to have characteristics distinctly different from those of an oxide semiconductor film having an amorphous structure and an oxide semiconductor film having a single crystal structure.
<<Elementary Analysis>>
This section describes the analysis results of elements included in the sample formed at a substrate temperature of R.T. and with an oxygen gas flow rate ratio of 10%. For the analysis, by energy dispersive X-ray spectroscopy (EDX), EDX mapping images are obtained. An energy dispersive X-ray spectrometer AnalysisStation JED-2300T manufactured by JEOL Ltd. is used as an elementary analysis apparatus in the EDX measurement. A Si drift detector is used to detect an X-ray emitted from the sample.
In the EDX measurement, an EDX spectrum of a point is obtained in such a manner that electron beam irradiation is performed on the point in a detection target region of a sample, and the energy of characteristic X-ray of the sample generated by the irradiation and its frequency are measured. In this embodiment, peaks of an EDX spectrum of the point are attributed to electron transition to the L shell in an In atom, electron transition to the K shell in a Ga atom, and electron transition to the K shell in a Zn atom and the K shell in an O atom, and the proportions of the atoms in the point are calculated. An EDX mapping image indicating distributions of proportions of atoms can be obtained through the process in an analysis target region of a sample.
FIGS. 21A to 21C show EDX mapping images in a cross section of the sample formed at a substrate temperature of R.T. and with an oxygen gas flow rate ratio of 10%. FIG. 21A shows an EDX mapping image of Ga atoms. The proportion of the Ga atoms in all the atoms is 1.18 atomic % to 18.64 atomic %. FIG. 21B shows an EDX mapping image of In atoms. The proportion of the In atoms in all the atoms is 9.28 atomic % to 33.74 atomic %. FIG. 21C shows an EDX mapping image of Zn atoms. The proportion of the Zn atoms in all the atoms is 6.69 atomic % to 24.99 atomic %. FIGS. 21A to 21C show the same region in the cross section of the sample formed at a substrate temperature of R.T. and with an oxygen flow rate ratio of 10%. In the EDX mapping images, the proportion of an element is indicated by grayscale: the more measured atoms exist in a region, the brighter the region is; the less measured atoms exist in a region, the darker the region is. The magnification of the EDX mapping images in FIGS. 21A to 21C is 7200000 times.
The EDX mapping images in FIGS. 21A to 21C show relative distribution of brightness indicating that each element has a distribution in the sample formed at a substrate temperature of R.T. and with an oxygen gas flow rate ratio of 10%. Areas surrounded by solid lines and areas surrounded by dashed lines in FIGS. 21A to 21C are examined.
In FIG. 21A , a relatively dark region occupies a large area in the area surrounded by the solid line, while a relatively bright region occupies a large area in the area surrounded by the dashed line. In FIG. 21B , a relatively bright region occupies a large area in the area surrounded by the solid line, while a relatively dark region occupies a large area in the area surrounded by the dashed line.
That is, the areas surrounded by the solid lines are regions including a relatively large number of In atoms and the areas surrounded by the dashed lines are regions including a relatively small number of In atoms. In FIG. 21C , the right portion of the area surrounded by the solid line is relatively bright and the left portion thereof is relatively dark. Thus, the area surrounded by the solid line is a region including In X2 Zn Y2 O Z2 , InO X1 , and the like as main components.
The area surrounded by the solid line is a region including a relatively small number of Ga atoms and the area surrounded by the dashed line is a region including a relatively large number of Ga atoms. In FIG. 21C , the upper left portion of the area surrounded by the dashed line is relatively bright and the lower right portion thereof is relatively dark. Thus, the area surrounded by the dashed line is a region including GaO X3 , Ga X4 Zn Y4 O Z4 , and the like as main components.
Furthermore, as shown in FIGS. 21A to 21C , the In atoms are relatively more uniformly distributed than the Ga atoms, and regions including InO X1 as a main component is seemingly joined to each other through a region including In X2 Zn Y2 O Z2 as a main component. Thus, the regions including In X2 Zn Y2 O Z2 and InO X1 as main components extend like a cloud.
An In—Ga—Zn oxide having a composition in which the regions including GaO X3 as a main component and the regions including In X2 Zn Y2 O Z2 or InO X1 as a main component are unevenly distributed and mixed can be referred to as a CAC-OS.
The crystal structure of the CAC-OS includes an nc structure. In an electron diffraction pattern of the CAC-OS with the nc structure, several or more bright spots appear in addition to bright sports derived from IGZO including a single crystal, a polycrystal, or a CAAC. Alternatively, in addition to the several or more bright spots, the crystal structure is defined as having high luminance regions appearing in a ring pattern.
As shown in FIGS. 21A to 21C , each of the regions including GaO X3 as a main component and the regions including In X2 Zn Y2 O Z2 or InO X1 as a main component has a size of greater than or equal to 0.5 nm and less than or equal to 10 nm, or greater than or equal to 1 nm and less than or equal to 3 nm. Note that it is preferable that a diameter of a region including each metal element as a main component be greater than or equal to 1 nm and less than or equal to 2 nm in the EDX mapping images.
As described above, the CAC-OS has a structure different from that of an IGZO compound in which metal elements are evenly distributed, and has characteristics different from those of the IGZO compound. That is, in the CAC-OS, regions including GaO X3 or the like as a main component and regions including In X2 Zn Y2 O Z2 or InO X1 as a main component are separated to form a mosaic pattern.
The conductivity of a region including In X2 Zn Y2 O Z2 or InO X1 as a main component is higher than that of a region including GaO X3 or the like as a main component. In other words, when carriers flow through regions including In X2 Zn Y2 O Z2 or InO X1 as a main component, the conductivity of an oxide semiconductor exhibits. Accordingly, when regions including In X2 Zn Y2 O Z2 or InO X1 as a main component are distributed in an oxide semiconductor like a cloud, high field-effect mobility (μ) can be achieved.
In contrast, the insulating property of a region including GaO X3 or the like as a main component is higher than that of a region including In X2 Zn Y2 O Z2 or InO X1 as a main component. In other words, when regions including GaO X3 or the like as a main component are distributed in an oxide semiconductor, leakage current can be suppressed and favorable switching operation can be achieved.
Accordingly, when a CAC-OS is used for a semiconductor element, the insulating property derived from GaO X3 or the like and the conductivity derived from In X2 Zn Y2 O Z2 or InO X1 complement each other, whereby high on-state current (Ion) and high field-effect mobility (μ) can be achieved.
A semiconductor element including a CAC-OS has high reliability. Thus, the CAC-OS is suitably used in a variety of semiconductor devices typified by a display.
At least part of this embodiment can be implemented in combination with any of the other embodiments and the other examples described in this specification as appropriate.
Embodiment 7
In this embodiment, a structure of an input/output device which is one embodiment of the present invention will be described with reference to FIG. 12 .
FIG. 12 is an exploded view of a structure of an input/output device 800 .
The input/output device 800 includes a display panel 806 and a touch sensor 804 having a region overlapping with the display panel 806 . Note that the input/output device 800 can be referred to as a touch panel.
The input/output device 800 is provided with a driver circuit 810 for driving the touch sensor 804 and the display panel 806 , a battery 811 for supplying power to the driver circuit 810 , and a housing where the touch sensor 804 , the display panel 806 , the driver circuit 810 , and the battery 811 are stored.
<<Touch Sensor 804 >>
The touch sensor 804 includes a region overlapping with the display panel 806 . Note that an FPC 803 is electrically connected to the touch sensor 804 .
For the touch sensor 804 , a resistive touch sensor, a capacitive touch sensor, or a touch sensor using a photoelectric conversion element can be used, for example.
Note that the touch sensor 804 may be used as part of the display panel 806 .
<<Display Panel 806 >>
For example, the display panel described in Embodiment 3 can be used as the display panel 806 . Note that an FPC 805 or the like is electrically connected to the display panel 806 .
<<Driver Circuit 810 >>
As the driver circuit 810 , a power supply circuit or a signal processing circuit can be used, for example. Power supplied to the battery or an external commercial power supply can be utilized.
The signal processing circuit has a function of outputting a video signal, a clock signal, and the like.
The power supply circuit has a function of supplying predetermined power.
<<Housing>>
An upper cover 801 , a lower cover 802 which fits the upper cover 801 , and a frame 809 which is stored in a region surrounded by the upper cover 801 and the lower cover 802 can be used for the housing, for example.
The frame 809 has a function of protecting the display panel 806 , a function of blocking electromagnetic waves generated by the operation of the driver circuit 810 , or a function as a radiator plate.
Metal, a resin, an elastomer, or the like can be used for the upper cover 801 , the lower cover 802 , or the frame 809 .
<<Battery 811 >>
The battery 811 has a function of supplying power.
Note that a member such as a polarizing plate, a retardation plate, or a prism sheet can be used for the input/output device 800 .
This embodiment can be combined with any of the other embodiments in this specification as appropriate.
Embodiment 8
In this embodiment, a semiconductor device (memory device) that can retain stored data even when not powered and that has an unlimited number of write cycles, and a CPU including the semiconductor device will be described. The CPU described in this embodiment can be used for the information processing device described in Embodiment 1, for example.
<Memory Device>
An example of a semiconductor device (memory device) which can retain stored data even when not powered and which has an unlimited number of write cycles is shown in FIGS. 13A to 13C . Note that FIG. 13B is a circuit diagram of the structure in FIG. 13A .
The semiconductor device illustrated in FIGS. 13A and 13B includes a transistor 3200 using a first semiconductor material, a transistor 3300 using a second semiconductor material, and a capacitor 3400 .
The first and second semiconductor materials preferably have different energy gaps. For example, the first semiconductor material can be a semiconductor material other than an oxide semiconductor (examples of such a semiconductor material include silicon (including strained silicon), germanium, silicon germanium, silicon carbide, gallium arsenide, aluminum gallium arsenide, indium phosphide, gallium nitride, and an organic semiconductor), and the second semiconductor material can be an oxide semiconductor. A transistor using a material other than an oxide semiconductor, such as single crystal silicon, can operate at high speed easily. On the other hand, a transistor including an oxide semiconductor has a low off-state current.
The transistor 3300 is a transistor in which a channel is formed in a semiconductor layer including an oxide semiconductor. Since the off-state current of the transistor 3300 is small, stored data can be retained for a long period. In other words, power consumption can be sufficiently reduced because a semiconductor memory device in which refresh operation is unnecessary or the frequency of refresh operation is extremely low can be provided.
In FIG. 13B , a first wiring 3001 is electrically connected to a source electrode of the transistor 3200 . A second wiring 3002 is electrically connected to a drain electrode of the transistor 3200 . A third wiring 3003 is electrically connected to one of a source electrode and a drain electrode of the transistor 3300 . A fourth wiring 3004 is electrically connected to a gate electrode of the transistor 3300 . A gate electrode of the transistor 3200 and the other of the source electrode and the drain electrode of the transistor 3300 are electrically connected to one electrode of the capacitor 3400 . A fifth wiring 3005 is electrically connected to the other electrode of the capacitor 3400 .
The semiconductor device in FIG. 13A has a feature that the potential of the gate electrode of the transistor 3200 can be retained, and thus enables writing, retaining, and reading of data as follows.
Writing and retaining of data are described. First, the potential of the fourth wiring 3004 is set to a potential at which the transistor 3300 is turned on, so that the transistor 3300 is turned on. Accordingly, the potential of the third wiring 3003 is supplied to the gate electrode of the transistor 3200 and the capacitor 3400 . That is, a predetermined charge is supplied to the gate electrode of the transistor 3200 (writing). Here, one of two kinds of charges providing different potential levels (hereinafter referred to as a low-level charge and a high-level charge) is supplied. After that, the potential of the fourth wiring 3004 is set to a potential at which the transistor 3300 is turned off, so that the transistor 3300 is turned off. Thus, the charge supplied to the gate electrode of the transistor 3200 is held (retaining).
Since the off-state current of the transistor 3300 is extremely small, the charge of the gate electrode of the transistor 3200 is retained for a long time.
Next, reading of data is described. An appropriate potential (a reading potential) is supplied to the fifth wiring 3005 while a predetermined potential (a constant potential) is supplied to the first wiring 3001 , whereby the potential of the second wiring 3002 varies depending on the amount of charge retained in the gate electrode of the transistor 3200 . This is because in the case of using an n-channel transistor as the transistor 3200 , an apparent threshold voltage V th _ H at the time when the high-level charge is given to the gate electrode of the transistor 3200 is lower than an apparent threshold voltage V th _ L at the time when the low-level charge is given to the gate electrode of the transistor 3200 . Here, an apparent threshold voltage refers to the potential of the fifth wiring 3005 which is needed to turn on the transistor 3200 . Thus, the potential of the fifth wiring 3005 is set to a potential V 0 which is between V th _ H and V th _ L , whereby charge supplied to the gate electrode of the transistor 3200 can be determined. For example, in the case where the high-level charge is supplied to the gate electrode of the transistor 3200 in writing and the potential of the fifth wiring 3005 is V 0 (>V th _ L ), the transistor 3200 is turned on. In the case where the low-level charge is supplied to the gate electrode of the transistor 3200 in writing, even when the potential of the fifth wiring 3005 is V 0 (<V th _ L ), the transistor 3200 remains off Thus, the data retained in the gate electrode of the transistor 3200 can be read by determining the potential of the second wiring 3002 .
Note that in the case where memory cells are arrayed, it is necessary that data of a desired memory cell is read. For example, the fifth wiring 3005 of memory cells from which data is not read may be supplied with a potential at which the transistor 3200 is turned off regardless of the potential supplied to the gate electrode, that is, a potential lower than V th _ H , whereby only data of a desired memory cell can be read. Alternatively, the fifth wiring 3005 of the memory cells from which data is not read may be supplied with a potential at which the transistor 3200 is turned on regardless of the potential supplied to the gate electrode, that is, a potential higher than V th _ L , whereby only data of a desired memory cell can be read.
The semiconductor device illustrated in FIG. 13C is different from the semiconductor device illustrated in FIG. 13A in that the transistor 3200 is not provided. Also in this case, writing and retaining operation of data can be performed in a manner similar to the semiconductor device illustrated in FIG. 13A .
Next, reading of data of the semiconductor device illustrated in FIG. 13C is described. When the transistor 3300 is turned on, the third wiring 3003 which is in a floating state and the capacitor 3400 are electrically connected to each other, and the charge is redistributed between the third wiring 3003 and the capacitor 3400 . As a result, the potential of the third wiring 3003 is changed. The amount of change in the potential of the third wiring 3003 varies depending on the potential of the one electrode of the capacitor 3400 (or the charge accumulated in the capacitor 3400 ).
For example, the potential of the third wiring 3003 after the charge redistribution is (C B ×V B0 +C×V)/(C B +C), where V is the potential of the one electrode of the capacitor 3400 , C is the capacitance of the capacitor 3400 , CB is the capacitance component of the third wiring 3003 , and V B0 is the potential of the third wiring 3003 before the charge redistribution. Thus, it can be found that, assuming that the memory cell is in either of two states in which the potential of the one electrode of the capacitor 3400 is V 1 and V 0 (V 1 >V 0 ), the potential of the third wiring 3003 in the case of retaining the potential V 1 (=(C B ×V B0 +C×V 1 )/(C B +C)) is higher than the potential of the third wiring 3003 in the case of retaining the potential V 0 (=(C B ×V B0 +C× V 0 )/(C B +C)).
Then, by comparing the potential of the third wiring 3003 with a predetermined potential, data can be read.
In this case, a transistor including the first semiconductor material may be used for a driver circuit for driving a memory cell, and a transistor including the second semiconductor material may be stacked over the driver circuit as the transistor 3300 .
When including a transistor in which a channel formation region is formed using an oxide semiconductor and which has an extremely small off-state current, the semiconductor device described in this embodiment can retain stored data for an extremely long time. In other words, refresh operation becomes unnecessary or the frequency of the refresh operation can be extremely low, which leads to a sufficient reduction in power consumption. Moreover, stored data can be retained for a long time even when power is not supplied (note that a potential is preferably fixed).
Furthermore, in the semiconductor device described in this embodiment, high voltage is not needed for writing data and there is no problem of deterioration of elements. Unlike in a conventional nonvolatile memory, for example, it is not necessary to inject and extract electrons into and from a floating gate; thus, a problem such as deterioration of a gate insulating film is not caused. That is, the semiconductor device described in this embodiment does not have a limit on the number of times data can be rewritten, which is a problem of a conventional nonvolatile memory, and the reliability thereof is drastically improved. Furthermore, data is written depending on the state of the transistor (on or off), whereby high-speed operation can be easily achieved.
The above memory device can also be used in an LSI such as a digital signal processor (DSP), a custom LSI, or a programmable logic device (PLD), in addition to a central processing unit (CPU), and a radio frequency identification (RF-ID) tag, for example.
<CPU>
A CPU including the above memory device is described below.
FIG. 14 is a block diagram illustrating a configuration example of the CPU including the above memory device.
The CPU illustrated in FIG. 14 includes, over a substrate 1190 , an arithmetic logic unit (ALU) 1191 , an ALU controller 1192 , an instruction decoder 1193 , an interrupt controller 1194 , a timing controller 1195 , a register 1196 , a register controller 1197 , a bus interface (BUS I/F) 1198 , a rewritable ROM 1199 , and a ROM interface (ROM I/F) 1189 . A semiconductor substrate, an SOI substrate, a glass substrate, or the like is used as the substrate 1190 . The rewritable ROM 1199 and the ROM interface 1189 may be provided over a separate chip. Needless to say, the CPU in FIG. 14 is just an example in which the configuration is simplified, and an actual CPU may have a variety of configurations depending on the application. For example, the CPU may have the following configuration: a structure including the CPU illustrated in FIG. 14 or an arithmetic circuit is considered as one core; a plurality of the cores are included; and the cores operate in parallel. The number of bits that the CPU can process in an internal arithmetic circuit or in a data bus can be, for example, 8, 16, 32, or 64.
An instruction that is input to the CPU through the bus interface 1198 is input to the instruction decoder 1193 and decoded therein, and then, input to the ALU controller 1192 , the interrupt controller 1194 , the register controller 1197 , and the timing controller 1195 .
The ALU controller 1192 , the interrupt controller 1194 , the register controller 1197 , and the timing controller 1195 conduct various controls in accordance with the decoded instruction. Specifically, the ALU controller 1192 generates signals for controlling the operation of the ALU 1191 . While the CPU is executing a program, the interrupt controller 1194 processes an interrupt request from an external input/output device or a peripheral circuit depending on its priority or a mask state. The register controller 1197 generates an address of the register 1196 , and reads/writes data from/to the register 1196 depending on the state of the CPU.
The timing controller 1195 generates signals for controlling operation timings of the ALU 1191 , the ALU controller 1192 , the instruction decoder 1193 , the interrupt controller 1194 , and the register controller 1197 . For example, the timing controller 1195 includes an internal clock generator for generating an internal clock signal on the basis of a reference clock signal, and supplies the internal clock signal to the above circuits.
In the CPU illustrated in FIG. 14 , a memory cell is provided in the register 1196 .
In the CPU illustrated in FIG. 14 , the register controller 1197 selects operation of retaining data in the register 1196 in accordance with an instruction from the ALU 1191 . That is, the register controller 1197 selects whether data is retained by a flip-flop or by a capacitor in the memory cell included in the register 1196 . When data retaining by the flip-flop is selected, a power supply voltage is supplied to the memory cell in the register 1196 . When data retaining by the capacitor is selected, the data is rewritten in the capacitor, and supply of the power supply voltage to the memory cell in the register 1196 can be stopped.
FIG. 15 is an example of a circuit diagram of a memory element that can be used for the register 1196 . A memory element 1200 includes a circuit 1201 in which stored data is volatile when power supply is stopped, a circuit 1202 in which stored data is nonvolatile even when power supply is stopped, a switch 1203 , a switch 1204 , a logic element 1206 , a capacitor 1207 , and a circuit 1220 having a selecting function. The circuit 1202 includes a capacitor 1208 , a transistor 1209 , and a transistor 1210 . Note that the memory element 1200 may further include another element such as a diode, a resistor, or an inductor, as needed.
Here, the above-described memory device can be used as the circuit 1202 . When supply of a power supply voltage to the memory element 1200 is stopped, a ground potential (0 V) or a potential at which the transistor 1209 in the circuit 1202 is turned off continues to be input to a gate of the transistor 1209 . For example, the gate of the transistor 1209 is grounded through a load such as a resistor.
Shown here is an example in which the switch 1203 is a transistor 1213 having one conductivity type (e.g., an n-channel transistor) and the switch 1204 is a transistor 1214 having a conductivity type opposite to the one conductivity type (e.g., a p-channel transistor). A first terminal of the switch 1203 corresponds to one of a source and a drain of the transistor 1213 , a second terminal of the switch 1203 corresponds to the other of the source and the drain of the transistor 1213 , and conduction or non-conduction between the first terminal and the second terminal of the switch 1203 (i.e., the on/off state of the transistor 1213 ) is selected by a control signal RD input to a gate of the transistor 1213 . A first terminal of the switch 1204 corresponds to one of a source and a drain of the transistor 1214 , a second terminal of the switch 1204 corresponds to the other of the source and the drain of the transistor 1214 , and conduction or non-conduction between the first terminal and the second terminal of the switch 1204 (i.e., the on/off state of the transistor 1214 ) is selected by the control signal RD input to a gate of the transistor 1214 .
One of a source and a drain of the transistor 1209 is electrically connected to one of a pair of electrodes of the capacitor 1208 and a gate of the transistor 1210 . Here, the connection portion is referred to as a node M 2 . One of a source and a drain of the transistor 1210 is electrically connected to a wiring that can supply a low power supply potential (e.g., a GND line), and the other is electrically connected to the first terminal of the switch 1203 (the one of the source and the drain of the transistor 1213 ). The second terminal of the switch 1203 (the other of the source and the drain of the transistor 1213 ) is electrically connected to the first terminal of the switch 1204 (the one of the source and the drain of the transistor 1214 ). The second terminal of the switch 1204 (the other of the source and the drain of the transistor 1214 ) is electrically connected to a wiring that can supply a power supply potential VDD. The second terminal of the switch 1203 (the other of the source and the drain of the transistor 1213 ), the first terminal of the switch 1204 (the one of the source and the drain of the transistor 1214 ), an input terminal of the logic element 1206 , and one of a pair of electrodes of the capacitor 1207 are electrically connected to each other. Here, the connection portion is referred to as a node M 1 . The other of the pair of electrodes of the capacitor 1207 can be supplied with a constant potential. For example, the other of the pair of electrodes of the capacitor 1207 can be supplied with a low power supply potential (e.g., GND) or a high power supply potential (e.g., VDD). The other of the pair of electrodes of the capacitor 1207 is electrically connected to the wiring that can supply a low power supply potential (e.g., a GND line). The other of the pair of electrodes of the capacitor 1208 can be supplied with a constant potential. For example, the other of the pair of electrodes of the capacitor 1208 can be supplied with a low power supply potential (e.g., GND) or a high power supply potential (e.g., VDD). The other of the pair of electrodes of the capacitor 1208 is electrically connected to the wiring that can supply a low power supply potential (e.g., a GND line).
The capacitor 1207 and the capacitor 1208 are not necessarily provided as long as the parasitic capacitance of the transistor, the wiring, or the like is actively utilized.
A control signal WE is input to a first gate (first gate electrode) of the transistor 1209 . As for each of the switch 1203 and the switch 1204 , a conduction state or a non-conduction state between the first terminal and the second terminal is selected by the control signal RD that is different from the control signal WE. When the first terminal and the second terminal of one of the switches are in the conduction state, the first terminal and the second terminal of the other of the switches are in the non-conduction state.
A signal corresponding to data retained in the circuit 1201 is input to the other of the source and the drain of the transistor 1209 . FIG. 15 illustrates an example in which a signal output from the circuit 1201 is input to the other of the source and the drain of the transistor 1209 . The logic value of a signal output from the second terminal of the switch 1203 (the other of the source and the drain of the transistor 1213 ) is inverted by the logic element 1206 , and the inverted signal is input to the circuit 1201 through the circuit 1220 .
In the example of FIG. 15 , a signal output from the second terminal of the switch 1203 (the other of the source and the drain of the transistor 1213 ) is input to the circuit 1201 through the logic element 1206 and the circuit 1220 ; however, one embodiment of the present invention is not limited thereto. The signal output from the second terminal of the switch 1203 (the other of the source and the drain of the transistor 1213 ) may be input to the circuit 1201 without its logic value being inverted. For example, in the case where the circuit 1201 includes a node in which a signal obtained by inversion of the logic value of a signal input from the input terminal is retained, the signal output from the second terminal of the switch 1203 (the other of the source and the drain of the transistor 1213 ) can be input to the node.
In FIG. 15 , the transistors included in the memory element 1200 except for the transistor 1209 can each be a transistor in which a channel is formed in a layer formed using a semiconductor other than an oxide semiconductor or in the substrate 1190 . For example, the transistor can be a transistor whose channel is formed in a silicon layer or a silicon substrate. Alternatively, a transistor in which a channel is formed in an oxide semiconductor film can be used for all the transistors in the memory element 1200 . Further alternatively, in the memory element 1200 , a transistor in which a channel is formed in an oxide semiconductor film can be included besides the transistor 1209 , and a transistor in which a channel is formed in a layer formed using a semiconductor other than an oxide semiconductor or the substrate 1190 can be used for the rest of the transistors.
As the circuit 1201 in FIG. 15 , for example, a flip-flop circuit can be used. As the logic element 1206 , for example, an inverter or a clocked inverter can be used.
In a period during which the memory element 1200 is not supplied with the power supply voltage, the semiconductor device described in this embodiment can retain data stored in the circuit 1201 by the capacitor 1208 that is provided in the circuit 1202 .
The off-state current of a transistor in which a channel is formed in an oxide semiconductor film is extremely small. For example, the off-state current of a transistor in which a channel is formed in an oxide semiconductor film is significantly smaller than that of a transistor in which a channel is formed in silicon having crystallinity. Thus, when the transistor in which a channel is formed in an oxide semiconductor film is used as the transistor 1209 , a signal is retained in the capacitor 1208 for a long time also in a period during which the power supply voltage is not supplied to the memory element 1200 . The memory element 1200 can accordingly retain the stored content (data) also in a period during which the supply of the power supply voltage is stopped.
Since the memory element performs pre-charge operation with the switch 1203 and the switch 1204 , the time required for the circuit 1201 to retain original data again after the supply of the power supply voltage is restarted can be shortened.
In the circuit 1202 , a signal retained by the capacitor 1208 is input to the gate of the transistor 1210 . Thus, after supply of the power supply voltage to the memory element 1200 is restarted, the state (the on state or the off state) of the transistor 1210 is determined in accordance with the signal retained by the capacitor 1208 and can be read from the circuit 1202 . Consequently, an original signal can be accurately read even when a potential corresponding to the signal retained by the capacitor 1208 changes to some degree.
By using the above-described memory element 1200 in a memory device such as a register or a cache memory included in a processor, data in the memory device can be prevented from being lost owing to the stop of the supply of the power supply voltage. Furthermore, shortly after the supply of the power supply voltage is restarted, the memory device can be returned to the same state as that before the power supply is stopped. Thus, the power supply can be stopped even for a short time in the processor or one or a plurality of logic circuits included in the processor, resulting in lower power consumption.
Although the memory element 1200 is used in a CPU in this embodiment, the memory element 1200 can also be used in an LSI such as a digital signal processor (DSP), a custom LSI, or a programmable logic device (PLD), and a radio frequency identification (RF-ID).
At least part of this embodiment can be implemented in combination with any of the other embodiments described in this specification as appropriate.
Embodiment 9
In this embodiment, electronic devices each of which includes an information processing device of one embodiment of the present invention will be described with reference to FIGS. 16A to 16H .
FIGS. 16A to 16G illustrate electronic devices. These electronic devices can include a housing 5000 , a display portion 5001 , a speaker 5003 , an LED lamp 5004 , operation keys 5005 (including a power switch and an operation switch), a connection terminal 5006 , a sensor 5007 (a sensor having a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotational frequency, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electric power, radiation, flow rate, humidity, gradient, oscillation, odor, or infrared ray), a microphone 5008 , and the like.
FIG. 16A illustrates a mobile computer which can include a switch 5009 , an infrared port 5010 , and the like in addition to the above components. FIG. 16B illustrates a portable image reproducing device (e.g., a DVD reproducing device) provided with a recording medium, and the portable image reproducing device can include a second display portion 5002 , a recording medium reading portion 5011 , and the like in addition to the above components. FIG. 16C illustrates a goggle-type display which can include the second display portion 5002 , a support portion 5012 , an earphone 5013 , and the like in addition to the above components. FIG. 16D illustrates a portable game console which can include the recording medium reading portion 5011 and the like in addition to the above components. FIG. 16E illustrates a digital camera with a television reception function, and the digital camera can include an antenna 5014 , a shutter button 5015 , an image receiving portion 5016 , and the like in addition to the above components. FIG. 16F illustrates a portable game console which can include the second display portion 5002 , the recording medium reading portion 5011 , and the like in addition to the above components. FIG. 16G illustrates a portable television receiver which can include a charger 5017 capable of transmitting and receiving signals, and the like in addition to the above components.
The electronic devices in FIGS. 16A to 16G can have a variety of functions such as a function of displaying a variety of information (e.g., a still image, a moving image, and a text image) on the display portion, a touch panel function, a function of displaying a calendar, date, time, and the like, a function of controlling processing with a variety of software (programs), a wireless communication function, a function of being connected to a variety of computer networks with a wireless communication function, a function of transmitting and receiving a variety of data with a wireless communication function, and a function of reading out a program or data stored in a recording medium and displaying it on the display portion. Furthermore, the electronic device including a plurality of display portions can have a function of displaying image information mainly on one display portion while displaying text information mainly on another display portion, a function of displaying a three-dimensional image by displaying images on a plurality of display portions with a parallax taken into account, or the like. Furthermore, the electronic device including an image receiving portion can have a function of shooting a still image, a function of taking moving images, a function of automatically or manually correcting a shot image, a function of storing a shot image in a recording medium (an external recording medium or a recording medium incorporated in the camera), a function of displaying a shot image on the display portion, or the like. Note that functions of the electronic devices in FIGS. 16A to 16G are not limited thereto, and the electronic devices can have a variety of functions.
FIG. 16H illustrates a smart watch, which includes a housing 7302 , a display panel 7304 , operation buttons 7311 and 7312 , a connection terminal 7313 , a band 7321 , a clasp 7322 , and the like.
The display panel 7304 mounted in the housing 7302 serving as a bezel includes a non-rectangular display region. The display panel 7304 may have a rectangular display region. The display panel 7304 can display an icon 7305 indicating time, another icon 7306 , and the like.
The smart watch in FIG. 16H can have a variety of functions such as a function of displaying a variety of information (e.g., a still image, a moving image, and a text image) on the display portion, a touch panel function, a function of displaying a calendar, date, time, and the like, a function of controlling processing with a variety of software (programs), a wireless communication function, a function of being connected to a variety of computer networks with a wireless communication function, a function of transmitting and receiving a variety of data with a wireless communication function, and a function of reading out a program or data stored in a recording medium and displaying it on the display portion.
The housing 7302 can include a speaker, a sensor (a sensor having a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotational frequency, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electric power, radiation, flow rate, humidity, gradient, oscillation, odor, or infrared rays), a microphone, and the like. Note that the smart watch can be manufactured using the light-emitting element for the display panel 7304 .
This embodiment can be combined with any of the other embodiments in this specification as appropriate.
In this specification and the like, for example, when it is explicitly described that X and Y are connected, the case where X and Y are electrically connected, the case where X and Y are functionally connected, and the case where X and Y are directly connected are included therein. Accordingly, another element may be interposed between elements having a connection relation shown in drawings and texts, without limiting to a predetermined connection relation, for example, the connection relation shown in the drawings and the texts.
Here, X and Y each denote an object (e.g., a device, an element, a circuit, a line, an electrode, a terminal, a conductive film, or a layer).
For example, in the case where X and Y are directly connected, an element that enables electrical connection between X and Y (e.g., a switch, a transistor, a capacitor, an inductor, a resistor, a diode, a display element, a light-emitting element, or a load) is not connected between X and Y, and X and Y are connected without the element that enables electrical connection between X and Y (e.g., a switch, a transistor, a capacitor, an inductor, a resistor, a diode, a display element, a light-emitting element, or a load) provided therebetween.
For example, in the case where X and Y are electrically connected, one or more elements that enable electrical connection between X and Y (e.g., a switch, a transistor, a capacitor, an inductor, a resistor, a diode, a display element, a light-emitting element, or a load) can be connected between X and Y. A switch is controlled to be on or off. That is, a switch is conducting or not conducting (is turned on or off) to determine whether current flows therethrough or not. Alternatively, the switch has a function of selecting and changing a current path. Note that the case where X and Y are electrically connected includes the case where X and Y are directly connected.
For example, in the case where X and Y are functionally connected, one or more circuits that enable functional connection between X and Y (e.g., a logic circuit such as an inverter, a NAND circuit, or a NOR circuit; a signal converter circuit such as a DA converter circuit, an AD converter circuit, or a gamma correction circuit; a potential level converter circuit such as a power source circuit (e.g., a step-up circuit or a step-down circuit) or a level shifter circuit for changing the potential level of a signal; a voltage source; a current source; a switching circuit; an amplifier circuit such as a circuit that can increase signal amplitude, the amount of current, or the like, an operational amplifier, a differential amplifier circuit, a source follower circuit, or a buffer circuit; a signal generation circuit; a memory circuit; and/or a control circuit) can be connected between X and Y. Note that for example, in the case where a signal output from X is transmitted to Y even when another circuit is interposed between X and Y, X and Y are functionally connected. Note that the case where X and Y are functionally connected includes the case where X and Y are directly connected and the case where X and Y are electrically connected.
Note that when it is explicitly described that X and Y are electrically connected, the case where X and Y are electrically connected (i.e., the case where X and Y are connected with another element or another circuit provided therebetween), the case where X and Y are functionally connected (i.e., the case where X and Y are functionally connected with another circuit provided therebetween), and the case where X and Y are directly connected (i.e., the case where X and Y are connected without another element or another circuit provided therebetween) are included therein. That is, in this specification and the like, the explicit description “X and Y are electrically connected” is the same as the description “X and Y are connected”.
For example, any of the following expressions can be used for the case where a source (or a first terminal or the like) of a transistor is electrically connected to X through (or not through) Z1 and a drain (or a second terminal or the like) of the transistor is electrically connected to Y through (or not through) Z2, or the case where a source (or a first terminal or the like) of a transistor is directly connected to one part of Z1 and another part of Z1 is directly connected to X while a drain (or a second terminal or the like) of the transistor is directly connected to one part of Z2 and another part of Z2 is directly connected to Y.
Examples of the expressions include, “X, Y, a source (or a first terminal or the like) of a transistor, and a drain (or a second terminal or the like) of the transistor are electrically connected to each other, and X, the source (or the first terminal or the like) of the transistor, the drain (or the second terminal or the like) of the transistor, and Y are electrically connected to each other in this order”, “a source (or a first terminal or the like) of a transistor is electrically connected to X, a drain (or a second terminal or the like) of the transistor is electrically connected to Y, and X, the source (or the first terminal or the like) of the transistor, the drain (or the second terminal or the like) of the transistor, and Y are electrically connected to each other in this order”, and “X is electrically connected to Y through a source (or a first terminal or the like) and a drain (or a second terminal or the like) of a transistor, and X, the source (or the first terminal or the like) of the transistor, the drain (or the second terminal or the like) of the transistor, and Y are provided to be connected in this order”. When the connection order in a circuit structure is defined by an expression similar to the above examples, a source (or a first terminal or the like) and a drain (or a second terminal or the like) of a transistor can be distinguished from each other to specify the technical scope.
Other examples of the expressions include, “a source (or a first terminal or the like) of a transistor is electrically connected to X through at least a first connection path, the first connection path does not include a second connection path, the second connection path is a path between the source (or the first terminal or the like) of the transistor and a drain (or a second terminal or the like) of the transistor, Z1 is on the first connection path, the drain (or the second terminal or the like) of the transistor is electrically connected to Y through at least a third connection path, the third connection path does not include the second connection path, and Z2 is on the third connection path”. Another example of the expression is “a source (or a first terminal or the like) of a transistor is electrically connected to X at least with a first connection path through Z1, the first connection path does not include a second connection path, the second connection path includes a connection path through which the transistor is provided, a drain (or a second terminal or the like) of the transistor is electrically connected to Y at least with a third connection path through Z2, and the third connection path does not include the second connection path”. Still another example of the expression is “a source (or a first terminal or the like) of a transistor is electrically connected to X through at least Z1 on a first electrical path, the first electrical path does not include a second electrical path, the second electrical path is an electrical path from the source (or the first terminal or the like) of the transistor to a drain (or a second terminal or the like) of the transistor, the drain (or the second terminal or the like) of the transistor is electrically connected to Y through at least Z2 on a third electrical path, the third electrical path does not include a fourth electrical path, and the fourth electrical path is an electrical path from the drain (or the second terminal or the like) of the transistor to the source (or the first terminal or the like) of the transistor”. When the connection path in a circuit structure is defined by an expression similar to the above examples, a source (or a first terminal or the like) and a drain (or a second terminal or the like) of a transistor can be distinguished from each other to specify the technical scope.
Note that these expressions are examples and there is no limitation on the expressions. Here, X, Y, Z1, and Z2 each denote an object (e.g., a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, and a layer).
Even when independent components are electrically connected to each other in a circuit diagram, one component has functions of a plurality of components in some cases. For example, when part of a wiring also functions as an electrode, one conductive film functions as the wiring and the electrode. Thus, “electrical connection” in this specification includes in its category such a case where one conductive film has functions of a plurality of components.
EXPLANATION OF REFERENCE
A 10 : region, A 11 : region, AF 1 : alignment film, AF 2 : alignment film, C 1 : capacitor, C 2 : capacitor, CF 1 : coloring film, G 1 ( i ): scan line, G 2 ( i ): scan line, KB 1 : structure body, M 1 : node, M 2 : node, M: transistor, MB: transistor, MD: transistor, MDB: transistor, GD: driver circuit, GDA: driver circuit, GDB: driver circuit, P 1 : positional information, P 2 : sensing information, S 1 : signal line, S 2 : signal line, SD: driver circuit, SD 1 : driver circuit, SD 2 : driver circuit, SW 1 : switch, SW 1 B: switch, SW 2 : switch, ANO: wiring, CSCOM: wiring, V 1 : image information, VBG: background information, SS: control information, V 11 : information, V 12 : information, VCOM 1 : wiring, VCOM 2 : wiring, 100 : transistor, 102 : substrate, 104 : conductive film, 106 : insulating film, 107 : insulating film, 108 : oxide semiconductor film, 108 a : oxide semiconductor film, 108 b : oxide semiconductor film, 108 c : oxide semiconductor film, 112 a : conductive film, 112 b : conductive film, 114 : insulating film, 116 : insulating film, 118 : insulating film, 120 a : conductive film, 120 b : conductive film, 150 : transistor, 200 : information processing device, 210 : arithmetic device, 211 : arithmetic portion, 212 : memory portion, 214 : transmission path, 215 : input/output interface, 220 : input/output device, 230 : display portion, 230 B: display portion, 231 : display region, 232 : pixel, 235 A: display element, 235 B: display element, 239 : selection circuit, 240 : input portion, 250 : sensor portion, 290 : communication portion, 501 C: insulating film, 504 : conductive film, 505 : bonding layer, 506 : insulating film, 508 : semiconductor film, 508 A: region, 508 B: region, 508 C: region, 511 B: conductive film, 511 C: conductive film, 512 A: conductive film, 512 B: conductive film, 516 : insulating film, 518 : insulating film, 519 B: terminal, 519 C: terminal, 520 : functional layer, 521 : insulating film, 522 : connection portion, 524 : conductive film, 528 : insulating film, 530 : pixel circuit, 550 : display element, 551 : third electrode, 552 : fourth electrode, 553 : layer containing light-emitting organic compound, 570 : substrate, 591 A: opening, 591 B: opening, 591 C: opening, 700 : display panel, 700 B: display panel, 702 : pixel, 705 : sealant, 750 : display element, 751 : first electrode, 751 H: opening, 752 : second electrode, 753 : layer containing liquid crystal material, 770 : substrate, 770 P: functional film, 771 : insulating film, 800 : input/output device, 801 : upper cover, 802 : lower cover, 803 : FPC, 804 : touch sensor, 805 : FPC, 806 : display panel, 809 : frame, 810 : driver circuit, 811 : battery, 1189 : ROM interface, 1190 : substrate, 1191 : ALU, 1192 : ALU controller, 1193 : instruction decoder, 1194 : interrupt controller, 1195 : timing controller, 1196 : register, 1197 : register controller, 1198 : bus interface, 1199 : ROM, 1200 : memory element, 1201 : circuit, 1202 : circuit, 1203 : switch, 1204 : switch, 1206 : logic element, 1207 : capacitor, 1208 : capacitor, 1209 : transistor, 1210 : transistor, 1213 : transistor, 1214 : transistor, 1220 : circuit, 3001 : wiring, 3002 : wiring, 3003 : wiring, 3004 : wiring, 3005 : wiring, 3200 : transistor, 3300 : transistor, 3400 : capacitor, 5000 : housing, 5001 : display portion, 5002 : display portion, 5003 : speaker, 5004 : LED lamp, 5005 : operation key, 5006 : connection terminal, 5007 : sensor, 5008 : microphone, 5009 : switch, 5010 : infrared port, 5011 : recording medium reading portion, 5012 : support portion, 5013 : earphone, 5014 : antenna, 5015 : shutter button, 5016 : image receiving portion, 5017 : charger, 7302 : housing, 7304 : display panel, 7305 : icon, 7306 : icon, 7311 : operation button, 7312 : operation button, 7313 : connection terminal, 7321 : band, 7322 : clasp.
This application is based on Japanese Patent Application serial no. 2015-170747 filed with Japan Patent Office on Aug. 31, 2015 and Japanese Patent Application serial no. 2016-121505 filed with Japan Patent Office on Jun. 20, 2016, the entire contents of which are hereby incorporated by reference.